Datasheet > 存储 > 闪存> EN29LV160B-90TIP

EN29LV160B-90TIP

更新时间： 2024-02-09 21:20:27

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
45页	420K
描述
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV160B-90TIP 数据手册

EN29LV160

EN29LV160 ******PRELIMINARY DRAFT******

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

- Byte program time: 8µs typical

• 3.0V, single power supply operation

- Sector erase time: 500ms typical

- Minimizes system level power requirements

- Chip erase time: 17.5s typical

• High performance

• JEDEC Standard program and erase

- Access times as fast as 70 ns

commands

• Low power consumption (typical values at 5

MHz)

• JEDEC standard

polling and toggle

DATA

bits feature

- 9 mA typical active read current

- 20 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Flexible Sector Architecture:

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,

and

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

thirty-one 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword

and thirty-one 32 Kword sectors (word mode)

- Supports full chip erase

• 0.23 µm triple-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• >100K program/erase endurance cycle

• Package Options

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 48-pin TSOP (Type 1)

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

- 48 ball 6mm x 8mm FBGA

• Commercial Temperature Range

• High performance program/erase speed

GENERAL DESCRIPTION

The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.

The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns

to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

Rev. A, Issue Date: 2004/03/30

or modifications due to changes in technical specifications.

12 3 4 5 6 7...45

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与EN29LV160B-90TIP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV160B-90TP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BB-70BIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BB-70TIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BT-70BIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BT-70TIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160C	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160CB-70BIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160CB-70TIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160CT-70BIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160CT-70TIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.

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