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EN29LV160B-90BI PDF预览

EN29LV160B-90BI

更新时间： 2024-02-26 23:45:27
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
45页 420K
描述
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV160B-90BI 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：1,2,1,31端子数量：48
字数：1048576 words字数代码：1000000
最高工作温度：70 °C最低工作温度：
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
切换位：YES类型：NOR TYPE
Base Number Matches：1

EN29LV160B-90BI 数据手册

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EN29LV160  
EN29LV160 ******PRELIMINARY DRAFT******  
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
- Byte program time: 8µs typical  
• 3.0V, single power supply operation  
- Sector erase time: 500ms typical  
- Minimizes system level power requirements  
- Chip erase time: 17.5s typical  
• High performance  
• JEDEC Standard program and erase  
- Access times as fast as 70 ns  
commands  
• Low power consumption (typical values at 5  
MHz)  
• JEDEC standard  
polling and toggle  
DATA  
bits feature  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Embedded Erase and Program Algorithms  
• Flexible Sector Architecture:  
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,  
and  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
thirty-one 64 Kbyte sectors (byte mode)  
- One 8 Kword, two 4 Kword, one 16 Kword  
and thirty-one 32 Kword sectors (word mode)  
- Supports full chip erase  
• 0.23 µm triple-metal double-poly  
triple-well CMOS Flash Technology  
• Low Vcc write inhibit < 2.5V  
• >100K program/erase endurance cycle  
• Package Options  
- Individual sector erase supported  
- Sector protection:  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- 48-pin TSOP (Type 1)  
Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
- 48 ball 6mm x 8mm FBGA  
• Commercial Temperature Range  
• High performance program/erase speed  
GENERAL DESCRIPTION  
The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.  
The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns  
to eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV160 has separate Output Enable (  
), Chip Enable (  
), and Write Enable (WE)  
CE  
OE  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain a  
minimum of 100K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
Rev. A, Issue Date: 2004/03/30  
1
or modifications due to changes in technical specifications.  
1234567...45

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与EN29LV160B-90BI相关器件

型号 品牌 获取价格 描述 数据表
EN29LV160B-90BIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160B-90BP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160B-90T EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160B-90TI EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160B-90TIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160B-90TP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BB-70BIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BB-70TIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BT-70BIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.
EN29LV160BT-70TIP EON

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 		16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.

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