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EN29LV160AT-90BIP PDF预览

EN29LV160AT-90BIP

更新时间： 2024-09-25 06:57:15
品牌 Logo 应用领域
EON 闪存存储内存集成电路
页数 文件大小 规格书
43页 410K
描述
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

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EN29LV160AT-90BIP 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FBGA, BGA48,6X8,32Reach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
最长访问时间：90 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：1,2,1,31端子数量：48
字数：1048576 words字数代码：1000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.016 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
切换位：YES类型：NOR TYPE
Base Number Matches：1

EN29LV160AT-90BIP 数据手册

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EN29LV160A  
EN29LV160A  
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
- Sector erase time: 500ms typical  
- Chip erase time: 17.5s typical  
• 3.0V, single power supply operation  
- Minimizes system level power requirements  
• JEDEC Standard program and erase  
• High performance  
commands  
- Access times as fast as 70 ns  
• JEDEC standard DATA# polling and toggle  
bits feature  
• Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 µA standby current  
• Single Sector and Chip Erase  
• Sector Unprotect Mode  
• Embedded Erase and Program Algorithms  
• Flexible Sector Architecture:  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and thirty-one 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and thirty-one 32-Kword sectors (word mode)  
• Triple-metal double-poly triple-well CMOS  
Flash Technology  
• Low Vcc write inhibit < 2.5V  
• Sector protection :  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
• minimum 1,000K program/erase endurance  
cycle  
• Package Options  
- Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
- 48-pin TSOP (Type 1)  
- 48 ball 6mm x 8mm FBGA  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
• Commercial and Industrial Temperature  
Range  
GENERAL DESCRIPTION  
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.  
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as  
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable  
(WE#) controls, which eliminate bus contention issues. This device is designed to allow either  
single Sector or full chip erase operation, where each Sector can be individually protected  
against program/erase operations or temporarily unprotected to erase or program. The device  
can sustain a minimum of 1,000K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. C, Issue Date: 2005/01/07  
1234567...43

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EN29LV160B-70BIP EON

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