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EN29LV160AB-70UCP PDF预览

EN29LV160AB-70UCP

更新时间： 2024-01-30 10:57:34
品牌 Logo 应用领域
晶豪 - ESMT 光电二极管内存集成电路闪存
页数 文件大小 规格书
44页 1435K
描述
Flash, 1MX16, 70ns, PDSO44, SOP-44

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EN29LV160AB-70UCP 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：SOP, SOP44,.63Reach Compliance Code：unknown
风险等级：5.63最长访问时间：70 ns
其他特性：IT ALSO OPERATES AT REGULATED SUPPLY VOLTAGE 3 TO 3.6 V备用内存宽度：8
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PDSO-G44长度：28.5 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：1,2,1,31端子数量：44
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP44,.63封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：3 mm部门规模：16K,8K,32K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.016 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：12.6 mmBase Number Matches：1

EN29LV160AB-70UCP 数据手册

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EN29LV160A  
EN29LV160A  
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
• 3.0V, single power supply operation  
• JEDEC Standard program and erase  
- Minimizes system level power requirements  
commands  
• High performance  
• JEDEC standard DATA# polling and toggle  
- Access times as fast as 70 ns  
bits feature  
• Low power consumption (typical values at 5  
• Single Sector and Chip Erase  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 µA standby current  
• Sector Unprotect Mode  
• Embedded Erase and Program Algorithms  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
• Flexible Sector Architecture:  
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,  
and thirty-one 64-Kbyte sectors (byte mode)  
- One 8-Kword, two 4-Kword, one 16-Kword  
and thirty-one 32-Kword sectors (word mode)  
• Triple-metal double-poly triple-well CMOS  
Flash Technology  
• Sector protection :  
• Low Vcc write inhibit < 2.5V  
- Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
• minimum 100K program/erase endurance  
cycle  
- Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
• Package Options  
- 44-pin SOP  
- 48-pin TSOP (Type 1)  
- 48 ball 6mm x 8mm TFBGA  
• High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Chip erase time: 17.5s typical  
• Commercial and Industrial Temperature  
Range  
GENERAL DESCRIPTION  
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.  
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as  
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable  
(WE#) controls, which eliminate bus contention issues. This device is designed to allow either  
single Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain  
a minimum of 100K program/erase cycles on each Sector.  
.
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. I, Issue Date: 2008/07/17  
1234567...44

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与EN29LV160AB-70UCP相关器件

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EN29LV160AB-70UIP ESMT

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 		Flash, 1MX16, 70ns, PDSO44, SOP-44
EN29LV160AB-90BC EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90BCP EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90BI EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90BIP EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90TC EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90TCP EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90TI EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90TIP EON

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 		16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AB-90UCP ESMT

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 		Flash, 1MX16, 90ns, PDSO44, SOP-44

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