Datasheet > 存储 > 闪存> EN25P20-100GC

EN25P20-100GC

更新时间： 2024-11-09 03:04:23

品牌	Logo	应用领域
EON		闪存存储
页数	文件大小	规格书
32页	389K
描述
2 Mbit Uniform Sector, Serial Flash Memory

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技术参数
数据手册

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EN25P20-100GC 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

EN25P20-100GC 数据手册

EN25P20

2 Mbit Uniform Sector, Serial Flash Memory

FEATURES

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 2 Mbit Serial Flash

- 2 M-bit/256 K-byte/1024 pages

- 256 bytes per programmable page

• High performance program/erase speed

- Byte program time: 7µs typical

- Page program time: 1.5ms typical

- Sector erase time: 800ms typical

- Chip erase time: 3 Seconds typical

• High performance

- 100MHz clock rate

• Low power consumption

• Minimum 100K endurance cycle

- 5 mA typical active current

- 1 μA typical power down current

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN

- All Pb-free packages are RoHS compliant

• Uniform Sector Architecture:

- Four 64-Kbyte sectors

• Commercial and industrial temperature

Range

• Software and Hardware Write Protection:

GENERAL DESCRIPTION

The EN25P20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25P20 is designed to allow either single Sector at a time or full chip erase operation. The

EN25P20 can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2007/05/07

12 3 4 5 6 7...32

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