Datasheet > EN25P10

EN25P10

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
31页	386K
描述
1 Mbit Uniform Sector, Serial Flash Memory

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EN25P10 数据手册

EN25P10

1 Mbit Uniform Sector, Serial Flash Memory

FEATURES

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 1 M-bit Serial Flash

- Enable/Disable protection with WP# pin

- 1 M-bit/128 K-byte/512 pages

- 256 bytes per programmable page

• High performance program/erase speed

- Byte program time: 7µs typical

- Page program time: 1.5ms typical

- Sector erase time: 500 ms typical

- Chip erase time: 2 Seconds typical

• High performance

- 100MHz clock rate

• Low power consumption

- 5 mA typical active current

• Minimum 100K endurance cycle

- 1 μA typical power down current

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN

- All Pb-free packages are RoHS compliant

• Uniform Sector Architecture:

- Four 32-Kbyte sectors

• Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25P10 is designed to allow either single Sector at a time or full chip erase operation. The

EN25P10 can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2007/5/4

12 3 4 5 6 7...31

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