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EN25F80-100QCP PDF预览

EN25F80-100QCP

更新时间: 2024-11-07 03:03:51
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
33页 455K
描述
8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

EN25F80-100QCP 数据手册

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EN25F80  
EN25F80  
8 Mbit Serial Flash Memory with 4Kbytes Uniform Sector  
FEATURES  
- Write Protect all or portion of memory via  
Single power supply operation  
software  
- Full voltage range: 2.7-3.6 volt  
- Enable/Disable protection with WP# pin  
8 Mbit Serial Flash  
High performance program/erase speed  
- 8 M-bit/1024 K-byte/4096 pages  
- Page program time: 1.5ms typical  
- 256 bytes per programmable page  
- Sector erase time: 150ms typical  
- Block erase time 800ms typical  
- Chip erase time: 10 Seconds typical  
High performance  
- 100MHz clock rate  
Low power consumption  
- 5 mA typical active current  
- 1 μA typical power down current  
Lockable 256 byte OTP security sector  
Minimum 100K endurance cycle  
Package Options  
- 8 pins SOP 200mil body width  
- 8 contact VDFN  
- 8 pins PDIP  
Uniform Sector Architecture:  
- 256 sectors of 4-Kbyte  
- 16 blocks of 64-Kbyte  
- Any sector or block can be  
erased individually  
- All Pb-free packages are RoHS compliant  
Commercial and industrial temperature  
Range  
Software and Hardware Write Protection:  
GENERAL DESCRIPTION  
The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to  
256 bytes at a time, using the Page Program instruction.  
The EN25F80 is designed to allow either single Sector at a time or full chip erase operation. The  
EN25F80 can be configured to protect part of the memory as the software protected mode. The device  
can sustain a minimum of 100K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. D, Issue Date: 2007/05/16  

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