Datasheet > 存储 > 闪存> EN25B16-100FC

EN25B16-100FC

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
EON		闪存存储
页数	文件大小	规格书
36页	460K
描述
16 Mbit Serial Flash Memory with Boot and Parameter Sectors

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技术参数
数据手册

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EN25B16-100FC 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

EN25B16-100FC 数据手册

EN25B16

16 Mbit Serial Flash Memory with Boot and Parameter Sectors

FEATURES

• Software and Hardware Write Protection:

• Single power supply operation

- Write Protect all or portion of memory via

- Full voltage range: 2.7-3.6 volt

software

- Enable/Disable protection with WP# pin

• 16 M-bit Serial Flash

• High performance program/erase speed

- 16 M-bit/2048 K-byte/8192 pages

- Byte program time: 7µs typical

- 256 bytes per programmable page

- Page program time: 1.5ms typical

- Sector erase time: 300 to 800ms typical

- Chip erase time: 18 Seconds typical

• High performance

- 100MHz clock rate

• Minimum 100K endurance cycle

• Low power consumption

• Package Options

- 5 mA typical active current

- 8 pins SOP 200mil body width

- 1 μA typical power down current

- 8 contact VDFN

- 16 pin SOP 300mil body width

- All Pb-free packages are RoHS compliant

• Flexible Sector Architecture:

- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one

32-Kbyte, and thirty one 64-Kbyte sectors

• Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN25B16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25B16 has thirty six sectors including thirty one sectors of 64KB, one sector of 32KB, one sector

of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector

at a time or full chip erase operation. The EN25B16 can protect boot code stored in the small sectors for

either bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles

on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2006/12/22

12 3 4 5 6 7...36

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