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EN25B10-50GIP PDF预览

EN25B10-50GIP

更新时间: 2024-02-24 05:08:14
品牌 Logo 应用领域
EON 闪存存储
页数 文件大小 规格书
31页 386K
描述
1 Mbit Serial Flash Memory with Boot and Parameter Sectors

EN25B10-50GIP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

EN25B10-50GIP 数据手册

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EN25B10  
EN25B10  
1 Mbit Serial Flash Memory with Boot and Parameter Sectors  
FEATURES  
Software and Hardware Write Protection:  
Single power supply operation  
- Write Protect all or portion of memory via  
- Full voltage range: 2.7-3.6 volt  
software  
1 M-bit Serial Flash  
- Enable/Disable protection with WP# pin  
- 1 M-bit/128 K-byte/512 pages  
- 256 bytes per programmable page  
High performance program/erase speed  
- Byte program time: 7µs typical  
- Page program time: 1.5ms typical  
- Sector erase time: 300 to 500ms typical  
- Chip erase time: 2 Seconds typical  
High performance  
- 75MHz clock rate  
Low power consumption  
- 5 mA typical active current  
Minimum 100K endurance cycle  
- 1 μA typical power down current  
Package Options  
- 8 pins SOP 150mil body width  
- 8 contact VDFN  
Flexible Sector Architecture:  
- Two 4-Kbyte, one 8-Kbyte, one 16-  
Kbyte,three 32-Kbyte sectors  
Commercial and industrial temperature  
Range  
GENERAL DESCRIPTION  
The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to  
256 bytes at a time, using the Page Program instruction.  
The EN25B10 has seven sectors including three sectors of 32KB, one sector of 16KB, one sector  
of 8KB and two sectors of 4KB. This device is designed to allow either single Sector at a time or full  
chip erase operation. The EN25B10 can protect boot code stored in the small sectors for either  
bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles  
on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. B, Issue Date: 2006/12/26  

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