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EMX1

更新时间: 2024-11-06 14:54:19
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1343K
描述
SOT-563

EMX1 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-563 Plastic-Encapsulate Transistors  
DUAL TRANSISTOR(NPN+NPN)  
EMX1  
SOT-563  
FEATURES  
z
z
z
z
Two 2SC2412K chips in a SOT-563 package  
Mounting possible with SOT-563 automatic mounting machines  
Transistor elements are independent, eliminating interference  
Mountingcostandareacanbecutinhalf  
MARKING:X1  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
60  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
7
V
Collector Current -Continuous  
Collector Power Dissipation  
150  
150  
mA  
mW  
PC  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=50μA,IE=0  
V(BR)CEO IC=1mA,IB=0  
V(BR)EBO IE=50μA,IC=0  
V
V
ICBO  
IEBO  
hFE  
VCB=60V,IE=0  
0.1  
0.1  
560  
0.4  
μA  
μA  
Emitter cut-off current  
VEB=7V,IC=0  
DC current gain  
VCE=6V,IC=1mA  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=50mA,IB=5mA  
VCE=12V,IC=2mA,f=100MHz  
VCB=12V,IE=0,f=1MHz  
V
180  
2.0  
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
www.jscj-elec.com  
1
Rev. - 2.0  

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