Datasheet > EMX1

EMX1

更新时间： 2024-11-10 14:54:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1343K
描述
SOT-563

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中文翻译

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数据手册

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EMX1 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

DUAL TRANSISTOR(NPN+NPN)

EMX1

SOT-563

FEATURES

Two 2SC2412K chips in a SOT-563 package

Mounting possible with SOT-563 automatic mounting machines

Transistor elements are independent, eliminating interference

Mountingcostandareacanbecutinhalf

MARKING:X1

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

150

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=60V,I_E=0

0.1

560

0.4

μA

Emitter cut-off current

V_EB=7V,I_C=0

DC current gain

V_CE=6V,I_C=1mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=50mA,I_B=5mA

V_CE=12V,I_C=2mA,f=100MHz

V_CB=12V,I_E=0,f=1MHz

180

2.0

MHz

Collector output capacitance

C_ob

3.5

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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