EMP109
UPDATED 12/15/2004
5.0 – 6.5 GHz Power Amplifier MMIC
FEATURES
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•
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5.0 – 6.5 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
20.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 17 dBm
APPLICATIONS
Dimension: 1130um X 2250um
Thickness: 85um + 15um
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Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified)
SYMBOL
F
PARAMETER/TEST CONDITIONS
Operating Frequency Range
MIN
TYP
MAX
UNITS
5.0
6.5
GHz
Output Power at 1dB Gain Compression
Small Signal Gain
P1dB
Gss
26.0
17.0
27.0
20.0
dBm
dB
Output 3rd Order Intermodulation Distortion
OIMD3
-41
-12
-6
-38
-8
dBc
dB
@∆f=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss
Input RL
Input Return Loss
Output RL Output Return Loss
dB
Idss
Vds
NF
Saturated Drain Current
Drain to Source Voltage
Noise Figure @6GHz
Vds =3V, VGS =0V
490
- 35
570
7
660
8
mA
V
7
dB
Rth
Tb
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
22
oC/W
+ 85
ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL
Vds
VGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
ABSOLUTE
12V
CONTINUOUS
8 V
-8V
- 4 V
Ids
Idss
650mA
IGSF
Forward Gate Current
Input Power
57mA
9.5 mA
PIN
24dBm
175°C
-65/175°C
6.2W
@ 3dB compression
150°C
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
-65/150°C
5.2W
PT
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised December 2004