生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 6 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.5 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EMH1402 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device |
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EMH1405 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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EMH1405_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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EMH1405-TL-H | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 30V, 8.5A, 19mOhm, Single EMH8, SOT-383FL / EMH8, 3000-REEL |
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EMH15 | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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EMH15_1 | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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EMH16 | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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EMH1A | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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EMH1AM101E83D00* | AISHI |
获取价格 |
Electrolytic SMD |
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EMH1AM102WE0D00* | AISHI |
获取价格 |
Electrolytic SMD |
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