生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 5 A |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.051 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.5 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EMH1303 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
EMH1303_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
EMH1303-TL-E | ONSEMI |
获取价格 |
P-Channel Power MOSFET, -12V, -7A, 23mΩ, Single EMH8, SOT-383FL / EMH8, 3000-REE | |
EMH1307 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
EMH1307 | ONSEMI |
获取价格 |
TRANSISTOR 6.5 A, 20 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, ECH8, 8 PIN | |
EMH1307_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
EMH1307TL | ONSEMI |
获取价格 |
6.5A, 20V, 0.026ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, ECH8, 8 PIN | |
EMH1307-TL-H | ONSEMI |
获取价格 |
P-Channel Power MOSFET, -20V, -6.5A, 26mΩ, Single EMH8, SOT-383FL / EMH8, 3000-R | |
EMH1401 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
EMH1402 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device |