Datasheet > EMF5

EMF5

更新时间： 2024-11-10 14:55:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	562K
描述
SOT-563

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中文翻译

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数据手册

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EMF5 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

EMF5

Dual Transistors (PNP+NPN)

SOT-563

FEATURES

2SA2018 and DTC144E are housed independently in a package.

Mounting possible with SOT-563 automatic mounting machines.

Transistor elements are independent, eliminating interference.

Mounting cost and area be cut in half.

Marking: F5

Tr1 Absolute maximum ratings (Ta=25℃)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-15

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-12

-6

-500

150

P_C

Collector Power Dissipation

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-15

-12

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-10μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-15V, I_E=0

V_EB=-6V, I_C=0

-0.1

μA

Emitter cut-off current

DC current gain

V_CE=-2V, I_C=-10mA

270

680

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-200mA, I_B=-10mA

V_CE=-2V, I_E=-10mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

-0.25

260

6.5

MHz

Collector output capacitance

C_ob

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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