JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMF5
Dual Transistors (PNP+NPN)
SOT-563
FEATURES
z
z
z
z
2SA2018 and DTC144E are housed independently in a package.
Mounting possible with SOT-563 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
Marking: F5
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-15
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-12
V
-6
-500
150
mA
mW
PC
Collector Power Dissipation
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-15
-12
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-10μA, IC=0
V
V
ICBO
IEBO
hFE
VCB=-15V, IE=0
VEB=-6V, IC=0
-0.1
-0.1
μA
μA
Emitter cut-off current
DC current gain
VCE=-2V, IC=-10mA
270
680
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-200mA, IB=-10mA
VCE=-2V, IE=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
-0.25
V
260
6.5
MHz
pF
Collector output capacitance
Cob
1
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Rev. - 1.0