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EMF44P02V PDF预览

EMF44P02V

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 860K
描述
EDFN3X3

EMF44P02V 数据手册

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EMF44P02V  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
‐20V  
44mΩ  
‐12A  
RDSON (MAX.)  
ID  
P‐Channel MOSFET  
UIS, Rg 100% Tested  
Pb‐Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±12  
UNIT  
Gate‐Source Voltage  
VGS  
V
TC = 25 °C  
‐12  
Continuous Drain Current  
ID  
TA = 25 °C  
‐6  
‐8  
A
TC = 100 °C  
Pulsed Drain Current1  
IDM  
‐48  
21  
TC = 25 °C  
Power Dissipation  
PD  
W
TC = 100 °C  
8.3  
2.5  
TA = 25 °C  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
1.6  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
‐55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction‐to‐Case  
Junction‐to‐Ambient3  
6
°C / W  
50  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
350°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2019/6/25  
p.1  

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