Datasheet > EMF30C02K

EMF30C02K

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
8页	253K
描述
TSOT23-6

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中文翻译

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数据手册

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EMF30C02K 数据手册

EMF30C02K

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N‐CH

P‐CH

‐20V

BVDSS

20V

30.5mΩ 100mΩ

5A ‐3.2A

DSON (MAX.)

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

V_GS

N‐CH

±12

P‐CH

±12

T_A= 25 °C

‐3.2

Continuous Drain Current

I_D

T_A= 100 °C

3.5

‐2.5

Pulsed Drain Current¹

I_DM

‐12.8

T_A= 25 °C

1.25

0.8

Power Dissipation

P_D

°C

T_A= 70 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

100

UNIT

Junction‐to‐Ambient

°C / W

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2012/12/27

p.1

12 3 4 5 6 7 8

中文翻译

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