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EMD4DXV6T1G

更新时间： 2024-02-21 15:57:18
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 65K
描述
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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EMD4DXV6T1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：LEAD FREE, CASE 463A-01, 6 PIN
针数：6Reach Compliance Code：unknown
风险等级：5.48其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICONBase Number Matches：1

EMD4DXV6T1G 数据手册

 浏览型号EMD4DXV6T1G的Datasheet PDF文件第2页浏览型号EMD4DXV6T1G的Datasheet PDF文件第3页浏览型号EMD4DXV6T1G的Datasheet PDF文件第4页浏览型号EMD4DXV6T1G的Datasheet PDF文件第5页 
EMD4DXV6T1,  
EMD4DXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the EMD4DXV6T1 series,  
two complementary BRT devices are housed in the SOT−563 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
6
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• These are Pb−Free Devices  
1
SOT−563  
CASE 463A  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , − minus sign for Q (PNP) omitted)  
2
1
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
50  
Vdc  
CBO  
CEO  
50  
Vdc  
U7 M G  
I
100  
mAdc  
C
G
1
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
U7 = Specific Device Code  
Total Device Dissipation  
P
357  
2.9  
mW  
mW/°C  
D
M
= Date Code  
T = 25°C (Note 1)  
Derate above 25°C (Note 1)  
A
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance,  
R
q
JA  
350  
°C/W  
Junction-to-Ambient (Note 1)  
ORDERING INFORMATION  
Total Device Dissipation  
P
500  
4.0  
mW  
mW/°C  
†
D
Device  
Package  
Shipping  
T = 25°C (Note 1)  
A
Derate above 25°C  
EMD4DXV6T1G  
SOT−563 4000/Tape & Reel  
(Pb−Free)  
Thermal Resistance,  
R
q
250  
°C/W  
JA  
Junction-to-Ambient (Note 1)  
EMD4DXV6T5G  
SOT−563 8000/Tape & Reel  
(Pb−Free)  
Junction and Storage Temperature  
T , T  
J
−55 to +150  
°C  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. FR−4 board with minimum mounting pad.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005− Rev. 1  
EMD4DXV6/D  
 
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