Datasheet > EMD3D256M16BS1

EMD3D256M16BS1

更新时间： 2022-05-14 22:22:08

品牌	Logo	应用领域
EVERSPIN		双倍数据速率
页数	文件大小	规格书
38页	2405K
描述
256Mb ST-DDR3 Spin-transfer Torque MRAM

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EMD3D256M16BS1 数据手册

EMD3D256M08BS1

EMD3D256M16BS1

256Mb ST-DDR3 Spin-transfer Torque

MRAM

FEATURES

• Non-volatile 256Mb (32Mb x 8, 16Mb x 16) DDR3

• Supports standard DDR3 SDRAM features

• V_DD= 1.5v +/- 0.075v

• Up to 667MHz CK (1333MT/sec/pin)

RoHS

• Page size of 512 bits (x8) or 1024 bits (x16)

• On-device termination

• On-Chip DLL aligns DQ, DQS, DQS transition with CK transition

• All addresses and control inputs are latched on rising edge of Clock

• Burst length of 8 with programmable Burst Chop length of 4

• Standard 10x13mm 78-Ball (x8) or 96-ball (x16) BGA Package

INTRODUCTION

The EMD3D256M08/16B 256Mb DDR3 Spin-transfer Torque MRAM (STT-MRAM) is a non-

volatile memory that oﬀers non-volatility and high endurance at DDR3 speeds. The device is

capable of DDR3 operation at rates of up to 1333MT/Sec/Pin. It is designed to comply with

all DDR3 DRAM features including on-device termination (ODT) and internal ZQ calibration

but with the beneﬁt of data persistence and extremely high write cycle endurance. With

Spin-Torque MRAM technology, cell refresh is not required, which greatly simpliﬁes system

design and reduces overhead.

All control and address inputs are synchronized with a pair of externally supplied diﬀerential

clocks, with input latching at clock crosspoints. I/Os are synchronized with a pair of bidirec-

tional strobes (DQS, DQS). The device uses a RAS/CAS multiplexing scheme and operates at

1.5V.

EMD3D256M08BS1/16BS1 Revision 1.3 10/2018

12 3 4 5 6 7...38

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型号	品牌	获取价格	描述	数据表
EMD3D256M16G2-150CBS1	EVERSPIN	获取价格	256Mb ST-DDR3 Spin-transfer Torque MRAM
EMD3D256M16G2-150CBS1R	EVERSPIN	获取价格	256Mb ST-DDR3 Spin-transfer Torque MRAM
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