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EMB16N06CS PDF预览

EMB16N06CS

更新时间: 2024-11-07 17:15:55
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杰力科技 - EXCELLIANCE /
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5页 224K
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TO251S-3

EMB16N06CS 数据手册

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EMB16N06CS  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
60V  
16mΩ  
42A  
R
DSON (MAX.)  
ID  
G
S
UIS, Rg 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
42  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
26  
A
Pulsed Drain Current1  
IDM  
IAS  
100  
20  
Avalanche Current  
L = 0.1mH, ID=20A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
20  
mJ  
Repetitive Avalanche Energy2  
10  
TC = 25 °C  
50  
Power Dissipation  
PD  
W
°C  
TC = 100 °C  
20  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
2.5  
75  
°C / W  
JunctiontoAmbient  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
2016/8/15  
p.1