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EMB15N03V PDF预览

EMB15N03V

更新时间: 2024-11-19 17:15:51
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杰力科技 - EXCELLIANCE /
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5页 231K
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EDFN3X3

EMB15N03V 数据手册

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EMB15N03V  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
30V  
15mΩ  
16A  
R
DSON (MAX.)  
ID  
G
UIS, Rg 100% Tested  
S
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
16  
UNIT  
GateSource Voltage  
VGS  
V
TC = 25 °C  
Continuous Drain Current  
ID  
TA = 25 °C  
9.8  
11.6  
64  
A
TC = 100 °C  
Pulsed Drain Current1  
IDM  
IAS  
Avalanche Current  
10  
L = 0.1mH, IAS=10A, RG=25Ω  
L = 0.05mH  
Avalanche Energy  
EAS  
EAR  
5
mJ  
W
Repetitive Avalanche Energy2  
2.5  
21  
TC = 25 °C  
Power Dissipation  
Power Dissipation  
PD  
TC = 100 °C  
8.3  
2.5  
TA = 25 °C  
PD  
W
°C  
TA = 100 °C  
1
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
6
°C / W  
JunctiontoAmbient3  
50  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
350°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2017/8/28ꢀ  
p.1ꢀ