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EMB14P03G PDF预览

EMB14P03G

更新时间: 2024-11-19 17:15:47
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杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
7页 838K
描述
SOP-8

EMB14P03G 数据手册

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EMB14P03G  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
-30V  
14mΩ  
-12A  
RDSON (MAX.)  
ID  
P Channel MOSFET  
UIS, Rg 100% Tested  
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±25  
-12  
-9  
UNIT  
Gate-Source Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 100 °C  
A
Pulsed Drain Current1  
IDM  
IAS  
-48  
-19  
90  
Avalanche Current  
L = 0.1mH, IAS=-19A, RG=25Ω  
TA = 25 °C  
Avalanche Energy  
Power Dissipation  
EAS  
mJ  
W
2.5  
PD  
TA = 100 °C  
1
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
Junction-to-Case  
25  
50  
°C / W  
Junction-to-Ambient3  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
350°C / W when mounted on a 1 in2 pad of 2 oz copper.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
2018/12/06  
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