Datasheet > EMB14P03G

EMB14P03G

更新时间： 2024-11-07 17:15:47

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	838K
描述
SOP-8

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中文翻译

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EMB14P03G 数据手册

EMB14P03G

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

-30V

14mΩ

-12A

RDSON (MAX.)

P Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±25

-12

-9

UNIT

Gate-Source Voltage

V_GS

T_A= 25 °C

Continuous Drain Current

I_D

T_A= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

-48

-19

Avalanche Current

L = 0.1mH, I_AS=-19A, RG=25Ω

T_A= 25 °C

Avalanche Energy

Power Dissipation

E_AS

2.5

P_D

T_A= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

°C / W

Junction-to-Ambient³

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³50°C / W when mounted on a 1 in²pad of 2 oz copper.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

2018/12/06

p.1

12 3 4 5 6 7

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