Datasheet > EM6GC16EWKE-12H

EM6GC16EWKE-12H

更新时间： 2024-01-16 17:12:30

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
85页	835K
描述
64M x 16 bit DDR3 Synchronous DRAM (SDRAM)

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EM6GC16EWKE-12H 数据手册

EtronTech

EM6GC16EWKE

64M x 16 bit DDR3 Synchronous DRAM (SDRAM)

Advance (Rev. 1.0, Jul. /2015)

Features

Overview

JEDEC Standard Compliant

The 1Gb Double-Data-Rate-3 DRAMs is double data

rate architecture to achieve high-speed operation. It is

internally configured as an eight bank DRAM.

•

Power supplies: V_DD& V_DDQ= +1.5V ± 0.075V

Operating temperature: 0~95 C (TC)

Supports JEDEC clock jitter specification

Fully synchronous operation

Fast clock rate: 667/800/933MHz

Differential Clock, CK & CK#

Bidirectional differential data strobe

- DQS & DQS#

8 internal banks for concurrent operation

8n-bit prefetch architecture

The 1Gb chip is organized as 8Mbit x 16 I/Os x 8

bank devices. These synchronous devices achieve

high speed double-data-rate transfer rates of up to

1866 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3

DRAM key features and all of the control and address

inputs are synchronized with a pair of externally

supplied differential clocks. Inputs are latched at the

cross point of differential clocks (CK rising and CK#

falling). All I/Os are synchronized with differential DQS

pair in a source synchronous fashion.

•

Pipelined internal architecture

Precharge & active power down

Programmable Mode & Extended Mode registers

Additive Latency (AL): 0, CL-1, CL-2

Programmable Burst lengths: 4, 8

Burst type: Sequential / Interleave

These devices operate with a single 1.5V ± 0.075V

power supply and are available in BGA packages.

• Output Driver Impedance Control

• 8192 refresh cycles / 64ms

- Average refresh period

≦ ≦

7.8µs @ 0 C TC +85 C

＜ ≦

3.9µs @ +85 C TC +95 C

• Write Leveling

• ZQ Calibration

• Dynamic ODT (Rtt_Nom & Rtt_WR)

RoHS compliant

•

Auto Refresh and Self Refresh

96-ball 8 x 13 x 1.0mm FBGA package

- Pb and Halogen Free

Table 1. Ordering Information

Part Number

Clock Frequency

Data Rate

Power Supply

Package

FBGA

EM6GC16EWKE-15H

EM6GC16EWKE-12H

EM6GC16EWKE-10H

667MHz

800MHz

933MHz

1333Mbps/pin V_DD1.5V, V_DDQ1.5V

1600Mbps/pin V_DD1.5V, V_DDQ1.5V

1866Mbps/pin V_DD1.5V, V_DDQ1.5V

FBGA

WK: indicates 8 x 13 x 1.0mm FBGA package

E: indicates Generation Code

H: indicates Pb and Halogen Free

Table 2. Speed Grade Information

Speed Grade

Clock Frequency CAS Latency

t_RCD

t_RP

(ns)

667MHz

800MHz

933MHz

DDR3-1333

DDR3-1600

DDR3-1866

13.5

13.75

13.91

13.75

13.91

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345 FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

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与EM6GC16EWKE-12H相关器件

型号	品牌	获取价格	描述	数据表
EM6GC16EWKE-15H	ETRON	获取价格	64M x 16 bit DDR3 Synchronous DRAM (SDRAM)
EM6J1	ROHM	获取价格	1.2V Drive Pch MOSFET
EM6K1	ROHM	获取价格	Small switching (30V, 0.1A)
EM6K1_1	ROHM	获取价格	2.5V Drive Nch+Nch MOS FET
EM6K18000	ROHM	获取价格	Small switching (30V, 0.1A)
EM6K1T2R	ROHM	获取价格	Small switching (30V, 0.1A)
EM6K31	ROHM	获取价格	2.5V Drive Nch Nch MOSFET
EM6K31_1009	ROHM	获取价格	2.5V Drive Nch Nch MOSFET
EM6K31T2R	ROHM	获取价格	2.5V Drive Nch Nch MOSFET
EM6K33	ROHM	获取价格	1.2V Drive Nch + Nch MOSFET

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