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EM6A9320BI-3.5 PDF预览

EM6A9320BI-3.5

更新时间: 2024-01-15 11:10:12
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
17页 363K
描述
4M x 32 DDR SDRAM

EM6A9320BI-3.5 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.75
Base Number Matches:1

EM6A9320BI-3.5 数据手册

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EtronTech  
EM6A9320  
4M x 32 DDR SDRAM  
Preliminary (Rev 0.6 5/2006)  
Features  
Overview  
Fast clock rate: 350/333/300/285/250/200 MHz  
Differential Clock CK & CK# input  
The EM6A9320 DDR SDRAM is a high-speed CMOS  
double data rate synchronous DRAM containing 128  
Mbits. It is internally configured as a quad 1M x 32  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal, CK).  
4 Bi-directional DQS. Data transactions on both  
edges of DQS (1DQS / Byte)  
DLL aligns DQ and DQS transitions  
Edge aligned data & DQS output  
Center aligned data & DQS input  
4 internal banks, 1M x 32-bit for each bank  
Data outputs occur at both rising edges of CK and CK#.  
Read and write accesses to the SDRAM are burst  
oriented; accesses start at a selected location and  
continue for a programmed number of locations in a  
programmed sequence.  
Programmable mode and extended mode  
registers  
Accesses begin with the registration of a BankActivate  
command, which is then followed by a Read or Write  
command.  
- CAS# Latency: 3, 4, 5  
- Burst length: 2, 4, 8  
The EM6A9320 provides programmable Read or Write  
burst lengths of 2, 4, 8. An auto precharge function may  
be enabled to provide a self-timed row precharge that is  
initiated at the end of the burst sequence.  
- Burst Type: Sequential & Interleave  
Full page burst length for sequential type only  
Start address of full page burst should be even  
The refresh functions, either Auto or Self Refresh are  
easy to use.  
All inputs except DQ’s & DM are at the positive  
edge of the system clock  
In addition, EM6A9320 features programmable DLL  
option. By having a programmable mode register and  
extended mode register, the system can choose the  
most suitable modes to maximize its performance.  
No Write-Interrupted by Read function  
4 individual DM control for write masking only  
Auto Refresh and Self Refresh  
These devices are well suited for applications requiring  
high memory bandwidth, result in a device particularly  
well suited to high performance main memory and  
graphics applications.  
4096 refresh cycles / 32ms  
Power supplies up to 350/333/300/285MHz:  
VDD = 2.8V ± 5%  
VDDQ = 2.8V ± 5%  
Power supplies up to 250/200MHz:  
VDD = 2.8V ± 5%  
VDDQ = 2.8V ± 5%  
Interface : SSTL_2 I/O compatible  
Standard 144-ball FBGA package  
Ordering Information  
Part Number  
EM6A9320BI-2.8  
EM6A9320BI-3.0  
EM6A9320BI-3.3  
EM6A9320BI-3.5  
EM6A9320BI-3.6  
EM6A9320BI-4  
EM6A9320BI-5  
Frequency Power Supply  
Package  
FBGA  
FBGA  
FBGA  
FBGA  
FBGA  
FBGA  
FBGA  
350MHz  
333MHz  
300MHz  
285MHz  
275MHz  
250MHz  
200MHz  
VDD 2.8V  
DDQ 2.8V  
V
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.  
TEL: (886)-3-5782345 FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  

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