Datasheet > EM6A9160TS-5G

EM6A9160TS-5G

更新时间： 2024-01-31 04:14:08

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
29页	275K
描述
8M x 16 DDR Synchronous DRAM (SDRAM)

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技术参数
数据手册

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EM6A9160TS-5G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.73
Is Samacsys：	N	Base Number Matches：	1

EM6A9160TS-5G 数据手册

EtronTech

EM6A9160

8M x 16 DDR Synchronous DRAM (SDRAM)

(Rev. 1.4 May/2006)

Features

Pin Assignment (Top View)

Fast clock rate: 300/275/250/200MHz

Differential Clock CK & /CK

Bi-directional DQS

DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 1M x 16-bit for each bank

Programmable Mode and Extended Mode registers

- /CAS Latency: 3, 4

•

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

Individual byte write mask control

DM Write Latency = 0

Auto Refresh and Self Refresh

4096 refresh cycles / 32ms

Precharge & active power down

Power supplies: V_{DD &}V_DDQ= 2.5V ± 5%

Interface: SSTL_2 I/O Interface

Package: 66 Pin TSOP II, 0.65mm pin pitch

Lead-free Package is available.

•

VSSQ

UDQS

VDDQ

LDQS

VREF

VSS

UDM

/CK

VDD

LDM

/WE

/CAS

/RAS

/CS

CKE

A11

BS0

BS1

A10/AP

VSS

VDD

Ordering Information

Part Number

Clock Frequency

Data Rate

600Mbps/pin

550Mbps/pin

500Mbps/pin

400Mbps/pin

Package

TSOP II

EM6A9160TS-3.3/3.3G*

EM6A9160TS-3.6/3.6G

EM6A9160TS-4/4G

EM6A9160TS-5/5G

300MHz

275MHz

250MHz

200MHz

Note : “G” indicates Pb-free package

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

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