Datasheet > EM66932A

EM66932A

更新时间： 2024-09-24 04:40:47

品牌	Logo	应用领域
钰创 - ETRON		动态存储器
页数	文件大小	规格书
20页	196K
描述
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)

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EM66932A 数据手册

Et r on Tech

EM66932A

4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)

Preliminary (Rev 0.1 June/2003)

Features

4096 refresh cycles/64ms

Single 3.0V, or 3.3V power supply

Interface: LVTTL

•

Clock rate: 133/125/100 MHz

•

Fully synchronous operation

Internal pipelined architecture

Four internal banks (1M x 32bit x 4bank)

Programmable Mode

Package : 90 ball-FBGA, 11x13mm, Lead Free

Ordering Information

- CAS# Latency: 1, 2 & 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential & Interleave

- Burst-Read-Single-Write

- Driving Strenght : Full & Half

- PASR (Partial Array Self Refresh)

- TCSR (Temperature Compensated Self Refresh)

Burst stop function

Part Number

EM66932ABG-7.5G

EM66932ABG-8G

EM66932ABG-1H/LG

Frequency

Package

11x13 BGA

133MHz

125MHz

100MHz

11x13 BGA

•

Individual byte controlled by DQM0-3

Auto Refresh and Self Refresh

Pin Assignment : Top View

DQ26

DQ28

VSSQ

VDDQ

VSS

DQ24

VDDQ

DQ27

DQ29

DQ31

DQM3

VSS

VSSQ

DQ25

DQ30

VDD

VDDQ

DQ22

DQ17

DQ23

VSSQ

DQ20

DQ18

DQ16

DQM2

DQ21

DQ19

VDDQ

VDD1Q

VSSQ

VDD

A10

BA1

A11

CLK

DQM1

VDDQ

VSSQ

DQ11

DQ13

CKE

BA0

CS#

RAS#

DQM0

VSSQ

VDDQ

DQ4

CAS#

VDD

DQ6

DQ1

VDDQ

VDD

WE#

DQ7

DQ8

VSS

DQ9

DQ14

VSSQ

VSS

DQ10

DQ12

VDDQ

DQ15

DQ5

DQ3

VSSQ

DQ0

DQ2

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C

TEL: (886)-3-5782345 FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

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