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EM658160TS-6 PDF预览

EM658160TS-6

更新时间： 2024-01-24 00:27:48
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
26页 158K
描述
4M x 16 DDR Synchronous DRAM (SDRAM)

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EM658160TS-6 技术参数

生命周期：Contact ManufacturerReach Compliance Code：compliant
风险等级：5.75最长访问时间：0.7 ns
最大时钟频率 (fCLK)：166 MHzI/O 类型：COMMON
交错的突发长度：2,4,8JESD-30 代码：R-PDSO-G66
内存密度：67108864 bit内存集成电路类型：DDR DRAM
内存宽度：16端子数量：66
字数：4194304 words字数代码：4000000
最高工作温度：70 °C最低工作温度：
组织：4MX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP66,.46封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源：2.5,3.3 V
认证状态：Not Qualified刷新周期：4096
连续突发长度：2,4,8最大待机电流：0.065 A
子类别：DRAMs最大压摆率：0.22 mA
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.635 mm端子位置：DUAL
Base Number Matches：1

EM658160TS-6 数据手册

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Et r on Tech  
EM658160  
4M x 16 DDR Synchronous DRAM (SDRAM)  
Etron Confidential  
(Rev. 1.1 Jan./2002)  
Features  
Pin Assignment (Top View)  
• Fast clock rate: 300/285/250/200/166/143/125MHz  
• Differential Clock CK & /CK  
• Bi-directional DQS  
• DLL enable/disable by EMRS  
• Fully synchronous operation  
• Internal pipeline architecture  
• Four internal banks, 1M x 16-bit for each bank  
• Programmable Mode and Extended Mode registers  
- /CAS Latency: 2, 2.5, 3  
1
VSS  
DQ15  
VSSQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
VSSQ  
DQ10  
DQ9  
VDDQ  
DQ8  
NC  
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
VSSQ  
DQ7  
NC  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
- Burst length: 2, 4, 8  
- Burst Type: Sequential & Interleaved  
• Individual byte write mask control  
• DM Write Latency = 0  
• Auto Refresh and Self Refresh  
• 4096 refresh cycles / 64ms  
VSSQ  
UDQS  
NC  
VDDQ  
LDQS  
NC  
VREF  
VSS  
UDM  
/CK  
VDD  
NC  
• Precharge & active power down  
• Power supplies: V = 3.3V 0.3V  
DD  
LDM  
/WE  
V
DDQ  
= 2.5V 0.2V  
CK  
/CAS  
/RAS  
/CS  
• Interface: SSTL_2 I/O Interface  
• Package: 66 Pin TSOP II, 0.65mm pin pitch  
CKE  
NC  
NC  
NC  
Ordering Information  
A11  
BS0  
BS1  
A10/AP  
A0  
A9  
Part Number  
EM658160TS-3.3  
EM658160TS-3.5  
EM658160TS-4  
EM658160TS-5  
EM658160TS-6  
EM658160TS-7  
EM658160TS-8  
Frequency  
300MHz  
285MHz  
250MHz  
200MHz  
166MHz  
143MHz  
125MHz  
Package  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
A8  
A7  
A6  
A1  
A5  
A2  
A4  
A3  
VSS  
VDD  
Overview  
The EM658160 SDRAM is a high-speed CMOS  
double data rate synchronous DRAM containing 64  
Mbits. It is internally configured as a quad 1M x 16  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal, CK).  
Data outputs occur at both rising edges of CK and /CK.  
Read and write accesses to the SDRAM are burst  
oriented; accesses start at a selected location and  
continue for a programmed number of locations in a  
programmed sequence. Accesses begin with the  
registration of a BankActivate command which is then  
followed by a Read or Write command. The EM658160  
provides programmable Read or Write burst lengths of 2,  
4, 8, full page.  
An auto precharge function may be enabled to  
provide a self-timed row precharge that is initiated at the  
end of the burst sequence. The refresh functions, either  
Auto or Self Refresh are easy to use. In addition,  
EM658160 features programmable DLL option. By  
having a programmable mode register and extended  
mode register, the system can choose the most suitable  
modes to maximize its performance. These devices are  
well suited for applications requiring high memory  
bandwidth, result in a device particularly well suited to  
high performance main memory and graphics  
applications.  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  
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