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EM63B165TS-7ISG PDF预览

EM63B165TS-7ISG

更新时间: 2024-11-13 01:13:27
品牌 Logo 应用领域
钰创 - ETRON 动态存储器
页数 文件大小 规格书
53页 1439K
描述
32M x 16 bit Synchronous DRAM (SDRAM)

EM63B165TS-7ISG 数据手册

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EM63B165TS  
EtronTech  
32M x 16 bit Synchronous DRAM (SDRAM)  
Advance (Rev. 2.0, Jun. /2016)  
Features  
Overview  
Fast access time from clock: 4.5/5/5.4 ns  
Fast clock rate: 200/166/143 MHz  
Fully synchronous operation  
Internal pipelined architecture  
8M word x 16-bit x 4-bank  
Programmable Mode registers  
- CAS Latency: 2 or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: Sequential or Interleaved  
- Burst stop function  
The EM63B165 SDRAM is a high-speed CMOS  
synchronous DRAM containing 512 Mbits. It is  
internally configured as 4 Banks of 8M word x 16  
DRAM with a synchronous interface (all signals  
are registered on the positive edge of the clock  
signal, CLK). Read and write accesses to the SDRAM  
are burst oriented; accesses start at a selected  
location and continue for a programmed number of  
locations in a programmed sequence. Accesses  
begin with the registration of a Bank Activate command  
which is then followed by a Read or Write command.  
The EM63B165 provides for programmable Read  
or Write burst lengths of 1, 2, 4, 8, or full page, with  
a burst termination option. An auto precharge function  
may be enabled to provide a self-timed row precharge  
that is initiated at the end of the burst sequence.  
The refresh functions, either Auto or Self Refresh  
are easy to use. By having a programmable mode  
register, the system can choose the most suitable  
modes to maximize its performance. These devices  
are well suited for applications requiring high memory  
bandwidth and particularly well suited to high  
performance PC applications.  
Auto Refresh and Self Refresh  
8192 refresh cycles/64ms  
CKE power down mode  
±
Single +3.3V 0.3V power supply  
Industrial Temperature: T = -40~85°C  
A
Interface: LVTTL  
54-pin 400 mil plastic TSOP II package  
- Pb free and Halogen free  
Table 1. Key Specifications  
EM63B165  
-5I/6I/7I  
tCK3  
tAC3  
tRAS  
tRC  
Clock Cycle time(min.)  
Access time from CLK (max.)  
Row Active time(min.)  
Row Cycle time(min.)  
5/6/7  
ns  
ns  
ns  
ns  
4.5/5/5.4  
40/42/42  
55/60/63  
Table 2. Ordering Information  
Package  
Part Number  
Frequency  
EM63B165TS-5ISG  
EM63B165TS-6ISG  
EM63B165TS-7ISG  
200MHz  
166MHz  
143MHz  
TSOP II  
TSOP II  
TSOP II  
TS: indicates TSOPII Package  
I: indicates Industrial Grade  
S: indicates Stacked Dice  
G: indicates Pb and Halogen Free  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc. reserves the right to change products or specification without notice.  

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