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EM639165 PDF预览

EM639165

更新时间: 2024-09-22 22:49:11
品牌 Logo 应用领域
钰创 - ETRON 动态存储器
页数 文件大小 规格书
48页 655K
描述
8Mega x 16bits SDRAM

EM639165 数据手册

 浏览型号EM639165的Datasheet PDF文件第2页浏览型号EM639165的Datasheet PDF文件第3页浏览型号EM639165的Datasheet PDF文件第4页浏览型号EM639165的Datasheet PDF文件第5页浏览型号EM639165的Datasheet PDF文件第6页浏览型号EM639165的Datasheet PDF文件第7页 
EtronTech  
EM639165  
8Mega x 16bits SDRAM  
Preliminary (Rev 1.0, 2/2001)  
Features  
Pin Assignment (Top View)  
·
·
Single 3.3 ± 0.3V power supply  
Fast clock rate  
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
VSSQ  
DQ7  
VDD  
DQML  
/WE  
1
2
3
4
5
6
7
8
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
VSS  
DQ15  
VSSQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
VSSQ  
DQ10  
DQ9  
VDDQ  
DQ8  
VSS  
NC  
DQMU  
CLK  
CKE  
NC  
A11  
A9  
A8  
A7  
A6  
A5  
-
-
PC133: 133 MHz (CL3)  
PC100: 100 MHz (CL2)  
·
·
·
Fully synchronous operation referenced to clock  
rising edge  
4-bank operation controlled by BA0, BA1 (Bank  
Address)  
Programmable Mode registers  
- /CAS Latency: 2 or 3  
- Burst Length: 1, 2, 4, 8 or full page  
- Burst Type: interleaved or linear burst  
Byte Control – DQML and DQMU  
Random column access  
Auto precharge / All banks precharge controlled  
by A10  
Auto and self-refresh  
Self-refresh mode: standard and low power  
4096 refresh cycles/64ms  
Interface: LVTTL  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
/CAS  
/RAS  
/CS  
BA0  
BA1  
·
·
·
A10(AP)  
A0  
·
·
·
·
·
A1  
A2  
A3  
VDD  
A4  
VSS  
54-pin 400 mil plastic TSOP II package  
Ordering Information  
Part Number  
Speed  
Grade  
Self refresh  
current (Max.)  
Key Specifications  
EM639165  
-
75/8  
EM639165TS-75  
PC133/CL3  
2 mA  
800 mA  
2 mA  
10/10 ns  
7.5/8 ns  
6/6 ns  
Clock Cycle time (min., CL=2)  
tCK2  
tCK3  
tAC2  
EM639165TS-75L PC133/CL3  
Clock Cycle time (min., CL=3)  
EM639165TS-8  
EM639165TS-8L  
PC100/CL2  
PC100/CL2  
Access time (max., CL=2)  
800 mA  
5.4/6 ns  
45/48 ns  
67.5/70 ns  
Access time (max., CL=3)  
tAC3  
tRAS  
tRC  
Row Active time (max.)  
Row Cycle time(min.)  
Overview  
EM639165 is a high-speed Synchronous Dynamic  
Random Access Memory (SDRAM), organized as 4  
banks x 2,097,152 words x 16 bits. All inputs and  
outputs are referenced to the rising edge of CLK.  
It achieves very high-speed data rates up to  
133MHz, and is suitable for main memories or graphic  
memories in computer systems. For handheld device  
application, we also provide a low power option, with  
self-refresh current under 800 mA.  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  

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