5秒后页面跳转
捷配首页

Datasheet > EM638165TS-10
EM638165TS-10 PDF预览

EM638165TS-10

更新时间： 2024-02-15 20:00:09
品牌 Logo 应用领域
钰创 - ETRON 动态存储器
页数 文件大小 规格书
71页 1058K
描述
4Mega x 16 Synchronous DRAM (SDRAM)

阅读下载

中文翻译

获取价格

EM638165TS-10 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：compliant风险等级：5.75
Base Number Matches：1

EM638165TS-10 数据手册

 浏览型号EM638165TS-10的Datasheet PDF文件第2页浏览型号EM638165TS-10的Datasheet PDF文件第3页浏览型号EM638165TS-10的Datasheet PDF文件第4页浏览型号EM638165TS-10的Datasheet PDF文件第5页浏览型号EM638165TS-10的Datasheet PDF文件第6页浏览型号EM638165TS-10的Datasheet PDF文件第7页 
EtronTech  
EM638165  
4Mega x 16 Synchronous DRAM (SDRAM)  
Preliminary (Rev 0.6, 2/2001)  
Features  
Pin Assignment (Top View)  
Fast access time from clock: 5/6/6/6/7 ns  
Fast clock rate: 166/143/133/125/100 MHz  
Fully synchronous operation  
Internal pipelined architecture  
1M word x 16-bit x 4-bank  
Programmable Mode registers  
- CAS# Latency: 2, or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: interleaved or linear burst  
- Burst stop function  
·
·
·
·
·
·
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
VSSQ  
DQ7  
VDD  
LDQM  
WE#  
CAS#  
RAS#  
CS#  
1
2
3
4
5
6
7
8
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
VSS  
DQ15  
VSSQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
VSSQ  
DQ10  
DQ9  
VDDQ  
DQ8  
VSS  
NC/RFU  
UDQM  
CLK  
CKE  
NC  
A11  
A9  
A8  
A7  
A6  
A5  
A4  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
Auto Refresh and Self Refresh  
4096 refresh cycles/64ms  
CKE power down mode  
·
·
·
·
·
·
Single +3.3V ± 0.3V power supply  
Interface: LVTTL  
54-pin 400 mil plastic TSOP II package  
BA0  
BA1  
A10/AP  
A0  
A1  
A2  
A3  
VDD  
Overview  
The EM638165 SDRAM is a high-speed CMOS  
VSS  
synchronous DRAM containing 64 Mbits. It is internally  
configured as 4 Banks of 1M word x 16 DRAM with a  
synchronous interface (all signals are registered on the  
positive edge of the clock signal, CLK). Read and write  
accesses to the SDRAM are burst oriented; accesses  
Key Specifications  
start at  
a selected location and continue for a  
EM638165  
-
6/7/7.5/8/10  
programmed number of locations in a programmed  
sequence. Accesses begin with the registration of a  
BankActivate command which is then followed by a  
Read or Write command.  
6/7/7.5/8/10 ns  
Clock Cycle time(min.)  
tCK3  
tAC3  
tRAS  
tRC  
5/5.4/5.4/6/7 ns  
42/45/45/48/50 ns  
60/63/68/70/80 ns  
Access time from CLK(max.)  
Row Active time(max.)  
The EM638165 provides for programmable Read  
or Write burst lengths of 1, 2, 4, 8, or full page, with a  
burst termination option. An auto precharge function  
may be enabled to provide a self-timed row precharge  
that is initiated at the end of the burst sequence. The  
refresh functions, either Auto or Self Refresh are easy  
to use.  
Row Cycle time(min.)  
Ordering Information  
Part Number  
EM638165TS-6  
EM638165TS-7  
EM638165TS-7.5  
EM638165TS-8  
EM638165TS-10  
Frequency  
166MHz  
143MHz  
133MHz  
125MHz  
100MHz  
Package  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
TSOP II  
By having a programmable mode register, the  
system can choose the most suitable modes to  
maximize its performance. These devices are well  
suited for applications requiring high memory  
bandwidth and particularly well suited to high  
performance PC applications.  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  
1234567...71

中文翻译

下载PDF

与EM638165TS-10相关器件

型号 品牌 获取价格 描述 数据表
EM638165TS-5G ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-5IG ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-6 ETRON

获取价格

 		4Mega x 16 Synchronous DRAM (SDRAM)
EM638165TS-6G ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-6IG ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-7 ETRON

获取价格

 		4Mega x 16 Synchronous DRAM (SDRAM)
EM638165TS-75 ETRON

获取价格

 		4Mega x 16 Synchronous DRAM (SDRAM)
EM638165TS-7G ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-7IG ETRON

获取价格

 		4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-8 ETRON

获取价格

 		4Mega x 16 Synchronous DRAM (SDRAM)

与EM638165TS-10相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证