256Kx16 LP SRAM EM6156K600V Series
GENERAL DESCRIPTION
The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as
262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS
technology. Its standby current is stable within the range of operating temperature.
The EM6156K600V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6156K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
z
z
Fast access time: 45/55/70ns
Low power consumption:
Operating current:
z
z
Tri-state output
Data byte control :
LB# (DQ0 ~ DQ7)
40/30/20mA (TYP.)
Standby current: -L/-LL version
20/2µA (TYP.)
UB# (DQ8 ~ DQ15)
Data retention voltage: 1.5V (MIN.)
Package:
z
z
z
z
z
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
256Kx16
MEMORY
ARRAY
A0-A17
DECODER
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CURCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
CONTROL
CIRCUIT
UB#
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A17
Address Inputs
DQ0 – DQ17 Data Inputs/Outputs
CE#
WE#
OE#
LB#
UB#
Vcc
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Vss
Ground
1
DCC-SR-041003-A