Datasheet > EM6156K1600TFA-45F

EM6156K1600TFA-45F

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
EOREX		静态存储器
页数	文件大小	规格书
12页	240K
描述
256Kx16 LP SRAM

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256Kx16 LP SRAM EM6156K600V Series

GENERAL DESCRIPTION

The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as

262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS

technology. Its standby current is stable within the range of operating temperature.

The EM6156K600V is well designed for low power application, and particularly well suited for battery

back-up nonvolatile memory application.

The EM6156K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

FEATURES

Fast access time: 45/55/70ns

Low power consumption:

Operating current:

Tri-state output

Data byte control :

LB# (DQ0 ~ DQ7)

40/30/20mA (TYP.)

Standby current: -L/-LL version

20/2µA (TYP.)

UB# (DQ8 ~ DQ15)

Data retention voltage: 1.5V (MIN.)

Package:

Single 2.7V ~ 3.6V power supply

All inputs and outputs TTL compatible

Fully static operation

44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

Vcc

Vss

256Kx16

MEMORY

ARRAY

A0-A17

DECODER

DQ0-DQ7

Lower Byte

DQ8-DQ15

Upper Byte

I/O DATA

CURCUIT

COLUMN I/O

CE#

WE#

OE#

LB#

CONTROL

CIRCUIT

UB#

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A17

Address Inputs

DQ0 – DQ17 Data Inputs/Outputs

CE#

WE#

OE#

LB#

UB#

Vcc

Chip Enable Input

Write Enable Input

Output Enable Input

Lower Byte Control

Upper Byte Control

Power Supply

Vss

Ground

DCC-SR-041003-A

12 3 4 5 6 7...12

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