Datasheet > EM6112K800TBA-70F

EM6112K800TBA-70F

更新时间： 2024-11-02 04:54:35

品牌	Logo	应用领域
EOREX		静态存储器
页数	文件大小	规格书
13页	317K
描述
512Kx8 LP SRAM

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512Kx8 LP SRAM EM6112K800V Series

GENERAL DESCRIPTION

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as

524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

The EM6112K800V is well designed for low power application, and particularly well suited for battery

back-up nonvolatile memory application.

The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

FEATURES

Fast access time: 45/55/70ns

Low power consumption:

Operating current:

Fully static operation

Tri-state output

Data retention voltage: 1.5V (MIN.)

Package:

40/30/20mA (TYP.)

Standby current: -L/-LL version

20/2µA (TYP.)

Single 2.7V ~ 3.6V power supply

All inputs and outputs TTL compatible

32-pin 450 mil SOP

32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm STSOP

36-ball 6mm x 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

Vcc

Vss

512Kx8

MEMORY

ARRAY

A0-A18

DECODER

I/O DATA

CURCUIT

COLUMN I/O

DQ0-DQ7

CE#

WE#

OE#

CONTROL

CIRCUIT

PIN DESCRIPTION

SYMBOL

A0 - A18

DQ0 – DQ7

CE#

DESCRIPTION

Address Inputs

Data Inputs/Outputs

Enable Input

WE#

OE#

Vcc

Write Enable Input

Output Enable Input

Power Supply

Vss

Ground

DCC-SR-041005-A

12 3 4 5 6 7...13

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