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EM584161BA-70E PDF预览

EM584161BA-70E

更新时间: 2024-01-31 18:41:32
品牌 Logo 应用领域
钰创 - ETRON 静态存储器
页数 文件大小 规格书
13页 250K
描述
256K x 16 Low Power SRAM

EM584161BA-70E 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.8
Base Number Matches:1

EM584161BA-70E 数据手册

 浏览型号EM584161BA-70E的Datasheet PDF文件第2页浏览型号EM584161BA-70E的Datasheet PDF文件第3页浏览型号EM584161BA-70E的Datasheet PDF文件第4页浏览型号EM584161BA-70E的Datasheet PDF文件第5页浏览型号EM584161BA-70E的Datasheet PDF文件第6页浏览型号EM584161BA-70E的Datasheet PDF文件第7页 
EtronTech  
EM584161  
256K x 16 Low Power SRAM  
Rev 2.0  
11/2003  
Features  
Pin Configuration  
48-Ball BGA (CSP), Top View  
Single power supply voltage of 1.65V to 1.95V  
Power down features using CE1# and CE2  
Low power dissipation  
1
2
3
4
5
6
A
B
C
D
E
F
LB#  
OE#  
A0  
A1  
A2  
CE2  
Data retention supply voltage: 0.9V to 1.95V  
Direct TTL compatibility for all input and output  
Wide operating temperature range: -40°C to 85°C  
Standby current @ VDD = 1.95 V  
DQ8  
DQ9  
GND  
VDD  
DQ14  
DQ15  
NC  
UB#  
DQ10  
DQ11  
DQ12  
DQ13  
NC  
A3  
A5  
A4  
A6  
CE1#  
DQ1  
DQ3  
DQ4  
DQ5  
WE#  
A11  
DQ0  
DQ2  
VDD  
GND  
DQ6  
DQ7  
NC  
ISB  
A17  
NC  
A14  
A12  
A9  
A7  
Maximum  
EM584161BA/BC-70/85  
EM584161BA-70E/85E  
8 µA  
A16  
A15  
A13  
A10  
80 µA  
Ordering Information  
G
H
Part Number  
Speed ISB  
Package  
EM584161BC-70  
EM584161BA-70  
EM584161BA-70E  
EM584161BC-85  
EM584161BA-85  
EM584161BA-85E  
70 ns  
70 ns  
70 ns  
85 ns  
85 ns  
85 ns  
6x8 BGA  
8x10 BGA  
8x10 BGA  
6x8 BGA  
8x10 BGA  
8x10 BGA  
8 µA  
8 µA  
80 µA  
8 µA  
8 µA  
80 µA  
A8  
Pin Description  
Symbol  
A0 - A17  
DQ0 - DQ15  
CE1#, CE2  
OE#  
Function  
Address Inputs  
Data Inputs / Outputs  
Chip Enable Inputs  
Output Enable  
WE#  
LB#, UB#  
GND  
Read / Write Control Input  
Data Byte Control Inputs  
Ground  
V
DD  
Power Supply  
Overview  
NC  
No Connection  
The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced  
CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit  
technology provides both high speed and low power. It is automatically placed in low-power mode when chip  
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are  
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.  
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various  
microprocessor system applications where high speed, low power and battery backup are required. And, with a  
guaranteed operating range from -40°C to 85°C, the EM584161 can be used in environments exhibiting  
extreme temperature conditions.  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  

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