Datasheet > EM565168

EM565168

更新时间： 2024-11-18 03:34:15

品牌	Logo	应用领域
钰创 - ETRON		静态存储器
页数	文件大小	规格书
12页	122K
描述
512K x 16 Pseudo SRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EM565168 数据手册

Et r on Tech

EM565168

512K x 16 Pseudo SRAM

Rev 1.0

Sep. 2003

Features

Pin Assignment 48-Ball BGA, Top View

Organized as 512K words by 16 bits

Fast Cycle Time : 55ns, 70ns

Standby Current : 100uA

•

LB#

DQ8

DQ9

VSS

OE#

UB#

DQ10

DQ11

DQ12

DQ13

CE1#

DQ1

DQ3

DQ4

DQ5

WE#

A11

CE2

DQ0

DQ2

VCC

VSS

DQ6

DQ7

Deep power-down Current : 10uA

(Memory cell data invalid)

Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)

Compatible with low power SRAM

Single Power Supply Voltage : 3.0V 0.3V

Package Type : 48-ball FBGA, 6x8mm

Lead Free Package available - EM565168BC-XXG,

A17

A14

A12

(

)

G : indicates Lead Free Package

VCC

DQ14

DQ15

A18

A16

A15

A13

A10

Pin Description

Symbol

A0 – A18

DQ0 – DQ15

CE1#

CE2

Function

Address Inputs

Data Inputs/Outputs

Chip Enable

Deep Power Down

Output Enable

Write Control

OE#

WE#

LB#

Lower Byte Control

Upper Byte Control

Power Supply

Ordering Information

UB#

Part Number

Speed

Package

V_CC

EM565168BC-55/55G 55 ns

EM565168BC-70/70G 70 ns

6x8 BGA; G: lead free

V_SS

Ground

Overview

The EM565168 is a 8M-bit Pseudo SRAM organized as 512K words by 16 bits. It is designed with advanced

CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration.

This device operates from a single power supply. Advanced circuit technology provides both high speed and

low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or

CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output

enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte

access. This device is well suited to various microprocessor system applications where high speed, low power

and battery backup are required. And, with a guaranteed wide operating range, the EM565168 can be used in

environments exhibiting extreme temperature conditions.

Pin Location

Symbol Location Symbol Location Symbol Location Symbol Location Symbol Location Symbol Location

A16

A17

A18

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

CE1#

CE2

WE#

LB#

A10

A11

A12

A13

A14

A15

UB#

VCC

GND

DQ0

DQ1

DQ2

OE#

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345 FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

12 3 4 5 6 7...12

中文翻译

下载PDF

与EM565168相关器件

型号	品牌	获取价格	描述	数据表
EM565168BC-55/55G	ETRON	获取价格	512K x 16 Pseudo SRAM
EM565168BC-70/70G	ETRON	获取价格	512K x 16 Pseudo SRAM
EM56600A	ELAN	获取价格	TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER
EM566168	ETRON	获取价格	1M x 16 Pseudo SRAM
EM566169BC	ETRON	获取价格	1M x 16 Pseudo SRAM
EM566169BC-60	ETRON	获取价格	1M x 16 Pseudo SRAM
EM566169BC-65	ETRON	获取价格	1M x 16 Pseudo SRAM
EM566169BC-70	ETRON	获取价格	1M x 16 Pseudo SRAM
EM566169BC-85	ETRON	获取价格	1M x 16 Pseudo SRAM
EM567168	ETRON	获取价格	2M x 16 Pseudo SRAM

与EM565168相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

EM565168

EM565168 数据手册

与EM565168相关器件

与EM565168相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EM565168

EM565168 数据手册

与EM565168相关器件

与EM565168相关文章

您还可以找

您在本页遇到什么问题？