Datasheet > EM564161BC-55

EM564161BC-55

更新时间： 2024-11-20 02:54:07

品牌	Logo	应用领域
钰创 - ETRON		静态存储器
页数	文件大小	规格书
14页	254K
描述
256K x 16 Low Power SRAM

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EM564161BC-55 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

EM564161BC-55 数据手册

Et r on Tech

EM564161

256K x 16 Low Power SRAM

Rev 3.1

04/2004

Features

Pin Configuration

48-Ball BGA (CSP), Top View

Single power supply voltage of 2.3V to 3.6V

Power down features using CE1# and CE2

Low power dissipation

•

LB#

OE#

CE2

DQ0

DQ2

VDD

GND

DQ6

DQ7

Data retention supply voltage: 1.0V to 3.6V

Direct TTL compatibility for all input and output

Wide operating temperature range: -40°C to 85°C

Standby current @ VDD = 3.6 V

DQ8

DQ9

GND

VDD

DQ14

DQ15

UB#

DQ10

DQ11

DQ12

DQ13

CE1#

DQ1

DQ3

DQ4

DQ5

WE#

A11

IDDS2

A17

A14

A12

Typical

1 µA

Maximum

10 µA

EM564161BC -55

A16

A15

A13

A10

EM564161BC/BA -70/85

1 µA

10 µA

EM564161BC –55E

5 µA

80 µA

EM564161BC/BA -70E/85E

Ordering Information

Part Number

Speed I_DDS2

Package

6x8 BGA

8x10 BGA

6x8 BGA

8x10 BGA

EM564161BC-55

55 ns

10 µA

80 µA

10 µA

80 µA

10 µA

80 µA

10 µA

80 µA

Pin Description

EM564161BC-55E 55 ns

EM564161BC-70 70 ns

EM564161BC-70E 70 ns

Symbol

A0 - A17

DQ0 - DQ15

CE1#, CE2

OE#

Function

Address Inputs

Data Inputs / Outputs

Chip Enable Inputs

Output Enable

EM564161BA-70

EM564161BA-70E

EM564161BC-85

EM564161BA-85

EM564161BA-85E

70 ns

85 ns

WE#

LB#, UB#

GND

Read / Write Control Input

Data Byte Control Inputs

Ground

Power Supply

No Connection

Overview

The EM564161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced

CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit

technology provides both high speed and low power. It is automatically placed in low-power mode when chip

enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are

used to select the device and for data retention control, and output enable (OE#) provides fast memory access.

Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various

microprocessor system applications where high speed, low power and battery backup are required. And, with a

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

12 3 4 5 6 7...14

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与EM564161BC-55相关器件

型号	品牌	获取价格	描述	数据表
EM564161BC-55E	ETRON	获取价格	256K x 16 Low Power SRAM
EM564161BC-70	ETRON	获取价格	256K x 16 Low Power SRAM
EM564161BC-70E	ETRON	获取价格	256K x 16 Low Power SRAM
EM564161BC-85	ETRON	获取价格	256K x 16 Low Power SRAM
EM564166	ETRON	获取价格	256K x 16 Low Power SRAM
EM564166BC-70	ETRON	获取价格	256K x 16 Low Power SRAM
EM564166BC-70E	ETRON	获取价格	256K x 16 Low Power SRAM
EM564166BC-85	ETRON	获取价格	256K x 16 Low Power SRAM
EM564166BC-85E	ETRON	获取价格	256K x 16 Low Power SRAM
EM56500A	ELAN	获取价格	TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER

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