5秒后页面跳转
EM562081BC-85 PDF预览

EM562081BC-85

更新时间: 2024-02-19 15:02:48
品牌 Logo 应用领域
钰创 - ETRON 静态存储器
页数 文件大小 规格书
12页 115K
描述
256K x 8 Low Power SRAM

EM562081BC-85 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.8
Is Samacsys:NBase Number Matches:1

EM562081BC-85 数据手册

 浏览型号EM562081BC-85的Datasheet PDF文件第2页浏览型号EM562081BC-85的Datasheet PDF文件第3页浏览型号EM562081BC-85的Datasheet PDF文件第4页浏览型号EM562081BC-85的Datasheet PDF文件第5页浏览型号EM562081BC-85的Datasheet PDF文件第6页浏览型号EM562081BC-85的Datasheet PDF文件第7页 
EtronTech  
EM562081  
256K x 8 Low Power SRAM  
Preliminary, Rev 1.0 7/2001  
Features  
Single power supply voltage of 2.7V to 3.6V  
Power down features using CE1# and CE2  
Low operating current : 25mA(max. for 70 ns)  
Maximum Standby current : 10mA at 3.6 V  
Data retention supply voltage: 1.5V to 3.6V  
Direct TTL compatibility for all input and output  
Wide operating temperature range: -40°C to 85°C  
Package type: 36-ball TFBGA, 6x8mm  
asserted low. There are three control inputs. CE1# and  
CE2 are used to select the device and for data retention  
control, and output enable (OE#) provides fast memory  
access. Data byte control pin (LB#,UB#) provides lower  
and upper byte access. This device is well suited to  
various microprocessor system applications where high  
speed, low power and battery backup are required. And,  
with a guaranteed operating range from -40°C to 85°C,  
the EM562081 can be used in environments exhibiting  
extreme temperature conditions.  
·
·
·
·
·
·
·
·
Pin Assignment  
Ordering Information  
1. 36-Ball BGA (CSP), Top View  
Part Number  
Speed IDDS2  
Package  
70 ns  
85 ns  
10 mA  
10 mA  
6x8 BGA  
EM562081BC-70  
EM562081BC-85  
1
2
3
4
5
6
6x8 BGA  
A
B
C
D
E
F
A0  
A 1  
A 3  
A 6  
A 8  
CE 2  
DQ 4  
DQ 5  
G ND  
V DD  
DQ 6  
DQ 7  
A9  
A 2  
W E #  
NC  
A 4  
A 5  
A 7  
DQ 0  
DQ 1  
V DD  
G ND  
DQ 2  
DQ 3  
A 1 4  
Pin Names  
Symbol  
A0 - A17  
DQ0-DQ7  
CE1#,CE2  
OE#  
Function  
Address Inputs  
Data Inputs/Outputs  
Chip Enable Inputs  
Output Enable  
NC  
A1 7  
A 1 6  
A 1 2  
WE#  
Read/Write Control Input  
Ground  
GND  
G
H
A 1 5  
A 1 3  
CE 1#  
A1 1  
O E#  
A1 0  
VDD  
Power Supply  
NC  
No Connection  
Overview  
The EM562081 is a 2,097,152-bit SRAM organized as  
262,144 words by 8 bits. It is designed with advanced  
CMOS technology. This Device operates from a single  
2.7V to 3.6V power supply. Advanced circuit  
technology provides both high speed and low power. It  
is automatically placed in low-power mode when chip  
enable (CE1#) is asserted high or (CE2) is  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C  
TEL: (886)-3-5782345 FAX: (886)-3-5778671  
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.  

与EM562081BC-85相关器件

型号 品牌 获取价格 描述 数据表
EM562161 ETRON

获取价格

128K x 16 Low Power SRAM
EM562161BC-55 ETRON

获取价格

128K x 16 Low Power SRAM
EM562161BC-70 ETRON

获取价格

128K x 16 Low Power SRAM
EM56300A ELAN

获取价格

TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER
EM56400A ELAN

获取价格

TINY CONTROLLER-BASED DUALCHANNELSPEECHSYNTHESIZER
EM564081 ETRON

获取价格

512K x 8 Low Power SRAM
EM564081BA-70 ETRON

获取价格

512K x 8 Low Power SRAM
EM564081BA-70E ETRON

获取价格

512K x 8 Low Power SRAM
EM564081BA-85 ETRON

获取价格

512K x 8 Low Power SRAM
EM564081BA-85E ETRON

获取价格

512K x 8 Low Power SRAM