eorex
EM42BM1684RTA
512Mb (8M×4Bank×16)
Double DATA RATE SDRAM
Features
Description
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
The EM42BM1684RTA is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 536,870,912 bits which
organized as 8Meg words x 4 banks by 16 bits.
The 512Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits and
It transfers the datafor both rising and falling edges
of the system clock.It means the doubled data
bandwidth can be achieved at the I/O pins.
• Single 2.5V 0.2V Power Supply
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• 2,2.5,3 Clock read latency
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled
at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ & DQS transitions with CLK
transition
Available packages:TSOPII 66P 400mil.
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
Ordering Information
Part No
Organization
Max. Freq
Package
Grade
Pb
EM42BM1684RTA-75F
32M X 16
133MHz @CL25
66pin TSOP(ll) Commercial Free
66pin TSOP(ll) Commercial Free
EM42BM1684RTA-6F
EM42BM1684RTA-5F
32M X 16
32M X 16
166MHz @CL25
200MHz @CL3
66pin TSOP(ll)
Commercial Free
* EOREX reserves the right to change products or specification without notice.
Jul. 2006
www.eorex.com
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