Datasheet > EM424M1684RTA-5FE

EM424M1684RTA-5FE

更新时间： 2024-02-09 15:53:38

品牌	Logo	应用领域
EOREX		动态存储器双倍数据速率
页数	文件大小	规格书
19页	283K
描述
512Mb (8M】4Bank】16) Double DATA RATE SDRAM

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eorex

EM42BM1684RTA

512Mb (8M×4Bank×16)

Double DATA RATE SDRAM

Features

Description

• Internal Double-Date-Rate architecture with 2

Accesses per clock cycle.

The EM42BM1684RTA is high speed Synchronous

graphic RAM fabricated with ultra high performance

CMOS process containing 536,870,912 bits which

organized as 8Meg words x 4 banks by 16 bits.

The 512Mb DDR SDRAM uses a double data rate

architecture to accomplish high-speed operation.

The data path internally prefetches multiple bits and

It transfers the datafor both rising and falling edges

of the system clock.It means the doubled data

bandwidth can be achieved at the I/O pins.

• Single 2.5V 0.2V Power Supply

• 2.5V SSTL-2 compatible I/O

• Burst Length (B/L) of 2, 4, 8

• 2,2.5,3 Clock read latency

• Bi-directional,intermittent data strobe(DQS)

• All inputs except data and DM are sampled

at the positive edge of the system clock.

• Data Mask (DM) for write data

• Sequential & Interleaved Burst type available

• Auto Precharge option for each burst accesses

• DQS edge-aligned with data for Read cycles

• DQS center-aligned with data for Write cycles

• DLL aligns DQ & DQS transitions with CLK

transition

Available packages:TSOPII 66P 400mil.

• Auto Refresh and Self Refresh

• 8,192 Refresh Cycles / 64ms

Ordering Information

Part No

Organization

Max. Freq

Package

Grade

EM42BM1684RTA-75F

32M X 16

133MHz @CL25

66pin TSOP(ll) Commercial Free

EM42BM1684RTA-6F

EM42BM1684RTA-5F

32M X 16

166MHz @CL25

200MHz @CL3

66pin TSOP(ll)

Commercial Free

* EOREX reserves the right to change products or specification without notice.

Jul. 2006

www.eorex.com

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