Datasheet > EM421M3284LBA-7FE

EM421M3284LBA-7FE

更新时间： 2024-11-13 04:17:23

品牌	Logo	应用领域
EOREX		动态存储器双倍数据速率
页数	文件大小	规格书
20页	1000K
描述
512Mb (4M】4Bank】32) Double DATA RATE SDRAM

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eorex

EM42AM3284LBA

512Mb (4M×4Bank×32)

Double DATA RATE SDRAM

Features

Description

• Internal Double-Date-Rate architecture with 2

Accesses per clock cycle.

• 1.8V ±0.1V VDD/VDDQ

• 1.8V LV-COMS compatible I/O

• Burst Length (B/L) of 2, 4, 8, 16

The EM42AM3284LBA is high speed Synchronous

graphic RAM fabricated with ultra high performance

CMOS process containing 536,870,912 bits which

organized as 4Meg words x 4 banks by 32 bits.

The 512Mb DDR SDRAM uses a double data rate

architecture to accomplish high-speed operation.

The data path internally prefetches multiple bits and

It transfers the datafor both rising and falling edges

of the system clock.It means the doubled data

bandwidth can be achieved at the I/O pins.

• 3 Clock read latency

• Bi-directional,intermittent data strobe(DQS)

• All inputs except data and DM are sampled

at the positive edge of the system clock.

• Data Mask (DM) for write data

• Sequential & Interleaved Burst type available

• Auto Precharge option for each burst accesses

• DQS edge-aligned with data for Read cycles

• DQS center-aligned with data for Write cycles

• No DLL;CK to DQS is not synchronized

• Deep power down mode

Available packages:TFBGA-90B(13mmx11mm).

• Partial Array Self-Refresh(PASR)

• Auto Temperature Compensated Self-Refresh

(TCSR) by built-in temperature sensor

• Auto Refresh and Self Refresh

• 8,192 Refresh Cycles / 64ms

Ordering Information

Part No

Organization

Max. Freq

Package

Grade

EM42AM3284LBA-75F

16M X 32

133MHz/DDR266 @CL3 TFBGA-90B Commercial Free

* EOREX reserves the right to change products or specification without notice.

Jul. 2006

www.eorex.com

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