Datasheet > EM421M1644RTA-6FE

EM421M1644RTA-6FE

更新时间： 2024-11-13 04:17:23

品牌	Logo	应用领域
EOREX		动态存储器双倍数据速率
页数	文件大小	规格书
20页	338K
描述
128Mb (2M】4Bank】16) Double DATA RATE SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EM421M1644RTA-6FE 数据手册

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第2页

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第3页

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第4页

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第5页

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第6页

浏览型号EM421M1644RTA-6FE的Datasheet PDF文件第7页

eorex

EM428M1644RTA

128Mb (2M×4Bank×16)

Double DATA RATE SDRAM

Features

Description

• Internal Double-Date-Rate architecture with 2

Accesses per clock cycle.

The EM428M1644RTA is high speed Synchronous

graphic RAM fabricated with ultra high performance

CMOS process containing 134,217,728 bits which

organized as 2Meg words x 4 banks by 16 bits.

The 128Mb DDR SDRAM uses a double data rate

architecture to accomplish high-speed operation.

The data path internally prefetches multiple bits and

It transfers the datafor both rising and falling edges

of the system clock.It means the doubled data

bandwidth can be achieved at the I/O pins.

• VDD/VDDQ= 2.5V 0.2V for (-75 and -6)

• VDD/VDDQ= 2.6V 0.1V for (-5 )

• 2.5V SSTL-2 compatible I/O

• Burst Length (B/L) of 2, 4, 8

• 2,2.5,3 Clock read latency

• Bi-directional,intermittent data strobe(DQS)

• All inputs except data and DM are sampled

at the positive edge of the system clock.

• Data Mask (DM) for write data

Available packages:TSOPII 66P 400mil.

• Sequential & Interleaved Burst type available

• Auto Precharge option for each burst accesses

• DQS edge-aligned with data for Read cycles

• DQS center-aligned with data for Write cycles

• DLL aligns DQ & DQS transitions with CLK’s

• Auto Refresh and Self Refresh

• 4,096 Refresh Cycles / 64ms

Ordering Information

Part No

Organization

Max. Freq

Package

Grade

EM428M1644RTA-75F

8M X 16

133MHz @CL2.5

66pin TSOP(ll) Commercial Free

EM428M1644RTA-6F

EM428M1644RTA-5F

8M X 16

166MHz @CL2.5

200MHz @CL3

66pin TSOP(ll)

Commercial Free

EM 42 8M 16 4 4 R T A - X F E

EOREX Memory

DDR SDRAM

Grade

E: extended temp.

Package

Density

F: Pb-free

BM: 32 Mega

AM: 16 Mega

8M: 8 Mega

4M: 4 Mega

2M: 2 Mega

1M: 1 Mega

Min Cycle Time (Max Freq.)

-5: 5ns (200MHz)

-6: 6ns (166MHz)

-75: 7.5ns (133MHz)

Organization

16: x16

Refresh

4: 4K

Revision

A: 1st

Package

T: TSOP

Interface

R: 2.5V

Bank

4: 4Bank

Apr. 2007

www.eorex.com

1/20

12 3 4 5 6 7...20

中文翻译

下载PDF

与EM421M1644RTA-6FE相关器件

型号	品牌	获取价格	描述	数据表
EM421M1644RTA-75FE	EOREX	获取价格	128Mb (2M】4Bank】16) Double DATA RATE SDRAM
EM421M1684LBA-75FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM
EM421M1684LBA-7FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM
EM421M1684LBA-8FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RBA-5FE	EOREX	获取价格	256Mb (4M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RBA-75FE	EOREX	获取价格	256Mb (4M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RBA-7FE	EOREX	获取价格	256Mb (4M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RTA-5FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RTA-75FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM
EM421M1684RTA-7FE	EOREX	获取价格	512Mb (8M】4Bank】16) Double DATA RATE SDRAM