Datasheet > EM39LV010

EM39LV010

更新时间： 2024-09-16 10:08:35

品牌	Logo	应用领域
义隆 - ELAN		/
页数	文件大小	规格书
23页	282K
描述
1M Bits (128Kx8) Flash Memory

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EM39LV010 数据手册

EM39LV010

1M Bits (128Kx8) Flash Memory

SPECIFICATION

General Description

The EM39LV010 is a 1M bits Flash memory organized as 128K x 8 bits. The EM39LV010

uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash

memory technology, the EM39LV010 provides a typical Byte-Program time of 11 µsec and a

typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the

completion of the Program or Erase operation. To protect against inadvertent write, the

device has on-chip hardware and software data protection schemes. The device offers

typical 100,000 cycles endurance and a greater than 10 years data retention. The

EM39LV010 conforms to JEDEC standard pin outs for x8 memories. The EM39LV010 is

offered in package types of 32-lead PLCC, 32-pin TSOP, 48-ball FBGA, and known good dice

(KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed

information (see Appendix at the bottom of this specification for Ordering Information).

The EM39LV010 devices are developed for applications that require memories with

convenient and economical updating of program, data or configuration, e.g., Networking cards,

Card Readers, Graphic cards, Digital TV, MP3, Wireless Phones, etc.

Features

End-of-Program or End-of-Erase

Detection

Single Power Supply

Full voltage range from 2.7 to 3.6 volts

Data# Polling

for both read and write operations

Toggle Bit

Sector-Erase Capability

Uniform 4Kbyte sectors

CMOS I/O Compatibility

JEDEC Standard

Pin-out and software command sets

compatible with single-power supply Flash

memory

Read Access Time

Access time: 45, 70 and 90 ns

Power Consumption

Active current: 15 mA (Typical)

High Reliability

Standby current: 1 µA (Typical)

Endurance cycles: 100K (Typical)

Data retention: 10 years

Erase/Program Features

Sector-Erase Time: 40 ms (Typical)

Chip-Erase Time: 40 ms (Typical)

Byte-Program Time: 11µs (Typical)

Chip Rewrite Time: 1.5 seconds (Typical)

Package Option

32-lead PLCC

32-pin TSOP

48-pin FBGA

Automatic Write Timing

Internal V_PPGeneration

This specification is subject to change without further notice. (04.09.2004 V1.0)

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