5秒后页面跳转
EM25LV010-33MS PDF预览

EM25LV010-33MS

更新时间: 2024-10-04 03:34:15
品牌 Logo 应用领域
义隆 - ELAN 闪存
页数 文件大小 规格书
30页 536K
描述
1 Megabit (128K x 8) Serial Flash Memory

EM25LV010-33MS 数据手册

 浏览型号EM25LV010-33MS的Datasheet PDF文件第2页浏览型号EM25LV010-33MS的Datasheet PDF文件第3页浏览型号EM25LV010-33MS的Datasheet PDF文件第4页浏览型号EM25LV010-33MS的Datasheet PDF文件第5页浏览型号EM25LV010-33MS的Datasheet PDF文件第6页浏览型号EM25LV010-33MS的Datasheet PDF文件第7页 
EM25LV010  
1 Megabit (128K x 8) Serial Flash Memory  
SPECIFICATION  
General Description  
The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single  
voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and  
a typical 40ms Block-Erase time. The device uses status register to detect the completion of  
the Program or Erase operation. To protect against inadvertent write, the device has on-chip  
hardware and software data protection schemes. The device offers typical 100,000 cycles  
endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI  
Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data  
in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The  
Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.  
The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD,  
please contact ELAN Microelectronics or its representatives for detailed information (see  
Appendix at the bottom of this specification for Ordering Information).  
The EM25LV010 devices are suitable for applications that require memories with convenient  
and economical updating of program, data or configurations, e.g., graphic cards, hard disk  
drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.  
Features  
Single Power Supply  
Erase Features  
Full voltage range from 2.7 to 3.6  
volts for both read and write operations  
Block-Erase Time: 40ms (Typical)  
Chip-Erase Time: 40ms (Typical)  
Regulated voltage range: 3.0 to 3.6  
volts for both read and write operations  
Small block Erase Capability  
Automatic Write Timing  
Block: Uniform 32K bytes  
Internal VPP Generation  
Clock Rate  
SPI Bus Compatible Serial Interface  
33MHz (Maximum)  
Power Consumption  
High Reliability:  
Active Current: 4mA (Typical)  
Endurance cycles: 100K (Typical)  
Data retention: 10 years  
Power-down Mode Standby  
current: 1µA (Typical)  
Page Program Features  
Package Option  
Up to 256 Bytes in 2ms (Typical)  
8-lead-SO (150 mil)  
This specification is subject to change without further notice. (11.08.2004 V1.0)  
Page 1 of 30  

与EM25LV010-33MS相关器件

型号 品牌 获取价格 描述 数据表
EM25LV010-33RKGBS ELAN

获取价格

1 Megabit (128K x 8) Serial Flash Memory
EM25LV010-33RMS ELAN

获取价格

1 Megabit (128K x 8) Serial Flash Memory
EM25LV512 ELAN

获取价格

512 K (64K x 8) Bits Serial Flash Memory
EM25LV512-25KGBS ELAN

获取价格

512 K (64K x 8) Bits Serial Flash Memory
EM25LV512-25MS ELAN

获取价格

512 K (64K x 8) Bits Serial Flash Memory
EM25LV512-33KGBS ELAN

获取价格

512 K (64K x 8) Bits Serial Flash Memory
EM25LV512-33MS ELAN

获取价格

512 K (64K x 8) Bits Serial Flash Memory
EM260 SILICON

获取价格

This datacheet applies to EmberZNet PRO 3.1 or greater
EM260-RTR SILICON

获取价格

Telecom Circuit, 1-Func, PQCC40, 6 X6 MM, 0.90MM HEIGHT, ROHS COMPLIANT, PLASTIC, QFN-40
EM260-RTY SILICON

获取价格

Micro Peripheral IC,