Datasheet > EM1B

EM1B

更新时间： 2024-04-09 18:58:32

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描述
Standard Rectifiers

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EM1B 数据手册

TH09/2479

IATF 0113686

TH97/2478

SGS TH07/1033

www.eicsemi.com

SILICON RECTIFIER DIODES

DO - 41

EM1B ~ EM1C

PRV : 800 ~ 1000 Volts

Io : 1.0 Ampere

FEATURES :

1.00 (25.4)

* High current capability

* High surge current capability

* High reliability

0.107 (2.7)

MIN.

0.080 (2.0)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MECHANICAL DATA :

0.034 (0.86)

MIN.

0.028 (0.71)

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.339 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

EM1B

EM1C

UNIT

Maximum Peak Reverse Voltage

VRM

800

1000

Maximum Peak Reverse Surge Voltage

Maximum Reverse Voltage

VRSM

850

800

1050

1000

Maximum Average Forward Current

IF(AV)

1.0

Maximum Peak Forward Surge Current

(50 Hz, Half-cycle, Sine Wave, Single Shot)

Maximum Forward Voltage at IF = 1.0 A

Maximum Reverse Current at Reverse Voltage Ta = 25 °C

Maximum Reverse Current at Reverse Voltage Ta = 100 °C

Junction Temperature Range

IFSM

0.97

°C

IR(H)

100

- 40 to + 150

Storage Temperature Range

TSTG

Page 1 of 2

Rev. 02 : March 25, 2005

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