TH09/2479
IATF 0113686
TH97/2478
SGS TH07/1033
www.eicsemi.com
SILICON RECTIFIER DIODES
DO - 41
PRV : 400 ~ 600 Volts
Io : 1.0 Ampere
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.107 (2.7)
MIN.
0.080 (2.0)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
EM1
EM1A
UNIT
Maximum Peak Reverse Voltage
VRM
400
600
V
Maximum Peak Reverse Surge Voltage
Maximum Reverse Voltage
VRSM
VR
450
400
650
V
V
A
600
Maximum Average Forward Current
IF(AV)
1.0
45
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine Wave, Single Shot)
Maximum Forward Voltage at IF = 1.0 A
Maximum Reverse Current at Reverse Voltage Ta = 25 °C
Maximum Reverse Current at Reverse Voltage Ta = 100 °C
Junction Temperature Range
IFSM
A
VF
IR
0.97
10
V
mA
mA
°C
°C
IR(H)
TJ
50
- 40 to + 150
- 40 to + 150
Storage Temperature Range
TSTG
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Rev. 02 : March 25, 2005