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EBE21EE8ABFA-6E-E PDF预览

EBE21EE8ABFA-6E-E

更新时间: 2024-02-01 06:20:44
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
27页 217K
描述
2GB Unbuffered DDR2 SDRAM DIMM

EBE21EE8ABFA-6E-E 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:240
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
Is Samacsys:N访问模式:DUAL BANK PAGE BURST
最长访问时间:0.45 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-XDMA-N240内存密度:19327352832 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:240字数:268435456 words
字数代码:256000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:256MX72封装主体材料:UNSPECIFIED
封装代码:DIMM封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

EBE21EE8ABFA-6E-E 数据手册

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PRELIMINARY DATA SHEET  
2GB Unbuffered DDR2 SDRAM DIMM  
EBE21EE8ABFA (256M words × 72 bits, 2 Ranks)  
Specifications  
Features  
Density: 2GB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
256M words × 72 bits, 2 ranks  
Mounting 18 pieces of 1G bits DDR2 SDRAM sealed  
in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
Power supply: VDD = 1.8V ± 0.1V  
DLL aligns DQ and DQS transitions with CK  
transitions  
Data rate: 800Mbps/667Mbps/533Mbps/400Mbps  
(max.)  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
Precharge: auto precharge option for each burst  
operation  
access  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E0907E10 (Ver. 1.0)  
Date Published June 2006 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2006  

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