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EBE11FD8AJFT-6E-E PDF预览

EBE11FD8AJFT-6E-E

更新时间: 2024-01-14 01:48:35
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
22页 215K
描述
1GB Fully Buffered DIMM

EBE11FD8AJFT-6E-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.82Is Samacsys:N
访问模式:DUAL BANK PAGE BURST其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):167 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N240内存密度:9663676416 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:240字数:134217728 words
字数代码:128000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:128MX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.5,1.8 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
子类别:Other Memory ICs最大压摆率:4 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EBE11FD8AJFT-6E-E 数据手册

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DATA SHEET  
1GB Fully Buffered DIMM  
EBE11FD8AJFT  
Specifications  
Features  
Density: 1GB  
JEDEC standard Raw Card B Design  
Organization  
Industry Standard Advanced Memory Buffer (AMB)  
128M words × 72 bits, 2 ranks  
High-speed differential point-to-point link interface at  
1.5V (JEDEC spec)  
Mounting 18 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
14 north-bound (NB) high speed serial lanes  
10 south-bound (SB) high speed serial lanes  
Various features/modes:  
Package  
240-pin fully buffered, socket type dual in line  
memory module (FB-DIMM)  
MemBIST and IBIST test functions  
PCB height: 30.35mm  
Transparent mode and direct access mode for  
DRAM testing  
Lead pitch: 1.00mm  
Advanced Memory Buffer (AMB): 655-ball FCBGA  
Lead-free (RoHS compliant)  
Power supply  
Interface for a thermal sensor and status indicator  
Channel error detection and reporting  
Automatic DDR2 SDRAM bus and channel  
calibration  
DDR2 SDRAM: VDD = 1.8V ± 0.1V  
AMB: VCC = 1.5V + 0.075V/0.045V  
Data rate: 667Mbps (max.)  
SPD (serial presence detect) with 1piece of 256 byte  
serial EEPROM  
Four internal banks for concurrent operation  
(components)  
Note: Warranty void if removed DIMM heat  
spreader.  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
Precharge: auto precharge option for each burst  
access  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Performance  
FB-DIMM  
DDR2 SDRAM  
System clock  
frequency  
Peak channel  
throughput  
Speed grade  
PC2-5300F  
FB-DIMM link data rate  
4.0Gbps  
Speed Grade  
DDR data rate  
667Mbps  
167MHz  
8.0GByte/s  
DDR2-667 (5-5-5)  
Document No. E1088E30 (Ver. 3.0)  
Date Published March 2008 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2007-2008  

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