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EBE10UE8ACFA-8E-E PDF预览

EBE10UE8ACFA-8E-E

更新时间: 2024-01-27 14:40:08
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
29页 229K
描述
1GB Unbuffered DDR2 SDRAM DIMM

EBE10UE8ACFA-8E-E 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84Is Samacsys:N
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):400 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N240
内存密度:8589934592 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:240
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM240,40
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES子类别:DRAMs
最大压摆率:2.32 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EBE10UE8ACFA-8E-E 数据手册

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DATA SHEET  
1GB Unbuffered DDR2 SDRAM DIMM  
EBE10UE8ACFA (128M words × 64 bits, 1 Rank)  
Specifications  
Features  
Density: 1GB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
128M words × 64 bits, 1 rank  
Mounting 8 pieces of 1G bits DDR2 SDRAM sealed  
in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
Power supply: VDD = 1.8V ± 0.1V  
Data rate: 800Mbps/667Mbps (max.)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Interface: SSTL_18  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5, 6  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
Precharge: auto precharge option for each burst  
/DQS can be disabled for single-ended Data Strobe  
access  
operation  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E1058E20 (Ver.2.0)  
Date Published November 2007 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2007  

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