5秒后页面跳转
EBE10RD4AJFA-4A-E PDF预览

EBE10RD4AJFA-4A-E

更新时间: 2024-01-10 04:55:00
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
30页 244K
描述
1GB Registered DDR2 SDRAM DIMM

EBE10RD4AJFA-4A-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84Is Samacsys:N
访问模式:SINGLE BANK PAGE BURST最长访问时间:0.6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):200 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N240
内存密度:9663676416 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:240
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX72
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM240,40
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):260电源:1.8 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES最大待机电流:0.682 A
子类别:Other Memory ICs最大压摆率:3.27 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:50
Base Number Matches:1

EBE10RD4AJFA-4A-E 数据手册

 浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第2页浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第3页浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第4页浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第5页浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第6页浏览型号EBE10RD4AJFA-4A-E的Datasheet PDF文件第7页 
DATA SHEET  
1GB Registered DDR2 SDRAM DIMM  
EBE10RD4AJFA (128M words × 72 bits, 1 Rank)  
Specifications  
Features  
Density: 1GB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
128M words × 72 bits, 1 rank  
Mounting 18 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Power supply: VDD = 1.8V ± 0.1V  
Data rate: 667Mbps/533Mbps/400Mbps (max.)  
Commands entered on each positive CK edge; data  
referenced to both edges of DQS  
Four internal banks for concurrent operation  
(components)  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_18  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
/DQS can be disabled for single-ended Data Strobe  
operation  
Precharge: auto precharge option for each burst  
access  
1 piece of PLL clock driver, 2 pieces of register driver  
and 1 piece of serial EEPROM (2K bits EEPROM) for  
Presence Detect (PD)  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E1038E30 (Ver. 3.0)  
Date Published March 2008 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2007-2008  

与EBE10RD4AJFA-4A-E相关器件

型号 品牌 描述 获取价格 数据表
EBE10RD4AJFA-5C-E ELPIDA 1GB Registered DDR2 SDRAM DIMM

获取价格

EBE10RD4AJFA-6E-E ELPIDA 1GB Registered DDR2 SDRAM DIMM

获取价格

EBE10RE8ACFA-4A-E ELPIDA DDR DRAM Module, 128MX72, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-240

获取价格

EBE10RE8ACFA-5C-E ELPIDA DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240

获取价格

EBE10RE8ACFA-6E-E ELPIDA Memory IC, 128MX72, CMOS, PDMA240

获取价格

EBE10UE8ACFA ELPIDA 1GB Unbuffered DDR2 SDRAM DIMM

获取价格