Complementary MOSFET
ELM34609AA-N
■General Description
■Features
ELM34609AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
N-channel
• Vds=30V
• Id=4A
P-channel
Vds=-30V
Id=-3A
• Rds(on) < 65mΩ(Vgs=10V) Rds(on) < 150mΩ(Vgs=-10V)
• Rds(on) < 120mΩ(Vgs=4.5V) Rds(on) < 250mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Vds
N-ch (Max.)
30
P-ch (Max.)
-30
Unit Note
Drain source voltage
V
V
-
Gate source voltage
-
Vgs
±
20
4
±20
Ta=25°C
Ta=70°C
-3
-2
Continuous drain current
Pulsed drain current
Id
Idm
A
3
10
2.0
-10
A
W
°C
3
Ta=25°C
Ta=70°C
2.0
Power dissipation
Pd
1.3
1.3
Junction and storage temperature range
Tj,Tstg
-
55 to 150
-
55 to 150
■Thermal Characteristics
Parameter
Symbol Device
Typ.
Max.
110
Unit
Note
Maximum junction to ambient
- -
Rθja
Rθja
N-ch
P-ch
°C/W
°C/W
Maximum junction to ambient
- -
110
■Pin configuration
■Circuit
SOP-8(TOP VIEW)
• N-ch
• P-ch
Pin No.
Pin name
D1
D2
1
2
3
4
5
6
7
8
SOURCE1
GATE1
1
2
3
4
8
7
6
5
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
G1
G2
S1
S2
7 - 1