Datasheet > ELM34603AA-N

ELM34603AA-N

更新时间： 2022-05-13 22:48:26

品牌	Logo	应用领域
ELM-TECH		/
页数	文件大小	规格书
7页	993K
描述
Complementary MOSFET

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ELM34603AA-N 数据手册

Complementary MOSFET

ELM34603AA-N

■General Description

■Features

ELM34603AA-N uses advanced trench

technology to provide excellent Rds(on)

and low gate charge.

N-channel

• Vds=30V

• Id=7A

P-channel

Vds=-30V

Id=-6A

• Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 34mΩ(Vgs=-10V)

• Rds(on) < 40mΩ(Vgs=4.5V) Rds(on) < 56mΩ(Vgs=-4.5V)

■Maximum Absolute Ratings

Parameter

Symbol

Vds

N-ch (Max.)

P-ch (Max.)

-30

Unit Note

Drain source voltage

Gate source voltage

Vgs

±20

Ta=25°C

Ta=70°C

-6

-5

Continuous drain current

Pulsed drain current

Idm

2.0

-20

°C

Ta=25°C

Ta=70°C

2.0

Power dissipation

1.3

Junction and storage temperature range

Tj,Tstg

55 to 150

■Thermal Characteristics

Parameter

Symbol Device

Typ.

Max.

62.5

Unit

Note

Maximum junction to ambient

- -

Rθja

N-ch

P-ch

°C/W

Maximum junction to ambient

- -

■Pin configuration

■Circuit

SOP-8(TOP VIEW)

• N-ch

• P-ch

Pin No.

Pin name

SOURCE1

GATE1

SOURCE2

GATE2

DRAIN2

DRAIN1

7 - 1

12 3 4 5 6 7

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